GC. MARKING Search Results

Contextual Info: GC Cement Micro-Measurements Strain Gage Cement OTHER ACCESSORIES USED IN A GC CEME NT INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  GSP-1 Gauze Sponges  GT-11 Camel’s Hair Brush

IEC 115-1, Clause 4.17.3.2

Contextual Info: igh Value Thick Film esistors High Value Value Thick ThickFilm Film Series Welwyn Component Resistors Resistors Welwyn Components GC Series GC Series igh working voltage to 10kV • High High working voltage to 10kV voltage to 10kV alue up ·sto 1Gworking ohm

IEC 115-1, Clause 4.17.3.2

Contextual Info: igh Value Thick Film esistors High Value Value Thick ThickFilm Film Series Welwyn Component Resistors Resistors Welwyn Components GC Series GC Series igh working voltage to 10kV • High High working voltage to 10kV voltage to 10kV alue up ·sto 1Gworking ohm

Contextual Info: High Value Thick Film Resistors • Value upto 1G Ohm • High stability thick film • High working voltage to 7KV GC s e r ie s Thick Film Element ELECTRICAL DATA GC55 Power rating at 70 ‘C Watts Resistance range Limiting Element Voltage GC 65 0.25 0.5

Contextual Info: IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C IC = 40A, TC = 100°C tSC ≥ 5µs, TJ max = 175°C C C G GC E VCE(on) typ. = 1.60V @ IC = 24A n-channel G Gate Applications • Inverters • UPS • Welding E E GC TO-247AD IRGP4640-EP

CTR50

Contextual Info: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21

Contextual Info: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21

marking GG

Abstract: a2400 gc. marking KTA2400
Contextual Info: SEMICONDUCTOR KTA2400 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 816 A2400 GC No. Item 1 KEC K 2 Lot No. 816 98.06.23 Marking Description KEC CORP. 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 Device Name A2400 KTA2400

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

TA4103F

Contextual Info: TA4103F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features Built in Lo and IF buffer amplifiers. Double balanced MIX circuit High conversion gain: GC = 3dB typ. Recommended operating voltage: VCC = 2.7~3.3 V

pin diagram of IC 7402

Abstract: CNY75A data sheet IC 7402 IC 7402 ic 7402 datasheet marking CODE GA CNY75B VDE0884 marking code GC diode CNY75CG
Contextual Info: CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21 (IEC 60068 part 1)

MA707

Abstract: marking GC diode GC marking diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA707 Silicon epitaxial planer type For UHF mixer Unit : mm INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● Mini package, enabling down-sizing of the equipment and automatic

A778

Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Contextual Info: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

SOT89 marking GA

Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Contextual Info: BAW78A.BAW78D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89

EPOXYLITE

Contextual Info: Epoxylite 813 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN EPOXYLITE 813 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  GSP-1 Gauze Sponges

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

CNY75A

Abstract: CNY75B VDE0884 marking code GC diode
Contextual Info: CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21 (IEC 60068 part 1)

Contextual Info: High Value Thick Film Resistors Resistors High Value Thick Film Welwyn Components Make Possible Resistors High Value Thick Film GC Series working voltage to 10kV •Resistors GCHigh Series Welwyn Components Value up to 1G ohm •GC • High Seriesworking voltage to 10kV

GC-IP2000

Abstract: DATASHEET OF IC 741 PR4401 Photodiode-Array GC-IP200 GP-IP2000 PR4402 QFN56-package PR-44025-00 GC-IP1000
Contextual Info: GC-IP2000 Datasheet Version: 1.3 Date: 26.03.2010 GEMAC – Gesellschaft für Mikroelektronikanwendung Chemnitz mbH Zwickauer Strasse 227 • 09116 Chemnitz · Germany Telephone: +49 371 3377 – 0 · Telefax: +49 371 3377 – 272 E-mail: interpolation@gemac-chemnitz.de · Web: www.gemac-chemnitz.de

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -sld 04-03-05 Raymond Monnin B Added footnote 1 to Table II, under group C end-point electricals. Update drawing paragraphs. gc 12-08-01 Charles F. Saffle

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -sld 04-03-08 Raymond Monnin B Added footnote 1 to table II, under group C end-point electricals. Update drawing paragraphs. -gc 12-11-08 Charles F. Saffle

Rubycon CE W

Abstract: Rubycon CE Rubycon CE w series RCR-2367C rubycon PX Rubycon "CE W" rubycon px series CE w series Rubycon CE RUBYCON rubycon electrolytic capacitor ripple current
Contextual Info: Messrs. ABB ALUMINUM ELECTROLYTIC CAPACITORS SPECIFICATION SHEET CUSTOMER PART No. Rubycon PART No. 35 PX 4700 M AB2 GC 18X31.5 DRAWING No. REE – 111795 ISSUE DATE 20 July 2012 ISSUE No. 1 RUBYCON CORPORATION ENGINEERING DIVISION 1938-1, NISHIMINOWA, INA-SHI, NAGANO-KEN, JAPAN

Contextual Info: Ordering number : ENA1839A SMA5101 MMIC http://onsemi.com Mixer, IIP3=15dBm, Gc=-0.5dB@450MHz, MCPH6 Features • • • Wide band : up to Ku band Low distortion : IIP3=20dBm @ICC > 11mA SMT, Ultra small package : 2.0x2.1×0.85mm • • • High conversion gain : -0.5dB (@450MHz)