GD34B Search Results

DG34B

Contextual Info: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

pal 014

Contextual Info: PRELIMINARY COM’L: -15/20 MACH355-15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 144 Pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circuit programmable ■ Flexible clocking

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

10BASE2

Abstract: 10BASE5 dcuo-0509d PCnet-Family PCI Ethernet Adapter Am79C900
Contextual Info: PRELIMINARY Am79C970 PCnet -PCI Single-Chip Ethernet Controller for PCI Local Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Periph­ eral Component Interconnect PCI local bus ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Contextual Info: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A

Contextual Info: K M 4 4 C 4 10 4 B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: K M 4 4 C 4 1 03 BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

jUPD482234

Abstract: ICC19
Contextual Info: NEC ELECTRONICS INC blE D NEC NEC Electronics Inc. Description Each of the /JPD482234 fast-page and ¿/PD482235 (hyper-page) video RAMs has a random access port and a serial read/write port. The serial read/write port is connected to an internal 4096-bit data register through

ADS7832

Contextual Info: B U R R -B R O W N « I ADS7832 1 Autocalibrating, 4-Channel, 12-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • PIN COMPATIBLE TO ADC7802 AND ADS7803 • LOW POWER: 14mW plus Power Down • SIGNAL-TCHNOISE + DISTORTION RATIO OVER TEMPERATURE: 69dB min with fIN = 1kHz

S95 SMD

Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors