GDT, SEMITRON Search Results
GDT, SEMITRON Datasheets Context Search
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GDT, semitron
Abstract: Semitron PF 1002 transistor 1002
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GDT, semitron
Abstract: Semitron SL1011
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SL1011* GDT, semitron Semitron SL1011 | |
Semitron
Abstract: SL1011 GDT, semitron
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SL1011* Semitron SL1011 GDT, semitron | |
1003Contextual Info: Semitron 1003 1003 Semitron minitube seriesseries minitube b e 3 ELECTRODE GDT GRAPHICAL SYMBOL SEMITRON GREENTUBE SERIES 3 TERMINAL MINI ARRESTER SERIES TOTALLY NON-RADIOACTIVE ELECTRICAL CHARACTERISTICS 090V 230V 260V 350V DC SPARKOVER V 70-120 184-276 |
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15MAX 1003 | |
GDT, semitron
Abstract: telephone hybrid gdt testing gdt testing method 1793 c GDT application hybrid gas arrester GDT, semitron, BT
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SL1021A090Contextual Info: Semitron 1021 1021 medium Semitron duty arrester series medium arrester a b e 3 ELECTRODE GDT a=TIP b=RING e=GROUND SEMITRON GREENTUBE SERIES 3 TERMINAL ARRESTER SERIES TOTALLY NON-RADIOACTIVE UL RECOGNIZED ELECTRICAL CHARACTERISTICS centre electrode |
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Contextual Info: Semitron 1021 1021 heavy Semitron duty arrester series heavy duty a b e 3 ELECTRODE GDT a=TIP b=RING e=GROUND SEMITRON GREENTUBE SERIES 3 TERMINAL HEAVY DUTY ARRESTER SERIES TOTALLY NON-RADIOACTIVE, UL RECOGNIZED ELECTRICAL CHARACTERISTICS centre electrode |
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sl 1053
Abstract: Semitron semitron 9.1 semitron 1026
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diode 18b
Abstract: GDT, semitron, BT 18-A
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8A/18B/18C D2982B 10ion, 8A/18B diode 18b GDT, semitron, BT 18-A | |
F10-NC1006
Abstract: F10-NL1006 F10-NL1022 F10-NL1039
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ai37fiflT 000G134 F10Waveform F10-NC1006 F10-NL1006 NU012 F10-NL1022 F10-NL1039 10jjS 100mS | |
GDT, semitron,Contextual Info: m o Q o s iiw s * SMILS00004 Description The Semitron-Crydom SLT is based on the proven SiBO D Silicon Breakover Device technology, designed for transient protection of telecommunication equipment. It provides higher power handling than a conventional avalanche diode (TVS) and |
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SMILS00004 200mA 10/160jas GDT, semitron, | |
DO-2144AAContextual Info: tape & reel Features • Bi-directional transient voltage protection • Nano second clamping response • Surge capability up to 250 amps • No performance degradation packaging Our surface-mount components are placed in embossed cavities of anti static/conductive carrier |
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GDT, semitron,Contextual Info: S E M T R O N INDUSTRIES LTD 13E 1 • ai37iai 0000134 D « S L C B - P I 1- r> FIO DATA LINE PROTECTION Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 6.8V to 48 Volts Nominal 100A Peak Pulse Current APPLICATIONS NEW GENERATION ■ Transient voltage suppression for Induced Lightning, NEMP, |
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ai37iai DO-35 DO-35 DO-41 DO-15 DO-201AD GDT, semitron, | |
T10N.C
Abstract: melf footprint PA-080
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137flâ T10NC DO-35 DO-35 DO-41 DO-15 DO-201AD T10N.C melf footprint PA-080 | |
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