TRANSISTOR BIPOLAR 400V 20A
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
O-220AB
O-220AB.
TRANSISTOR BIPOLAR 400V 20A
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transistor 20a
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
O-220AB
O-220AB.
transistor 20a
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555 triangular wave
Abstract: No abstract text available
Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40UPbF
O-220AB
555 triangular wave
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f1010
Abstract: 555 triangular wave B-989
Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40FPbF
O-220AB
O-220AB
O-220AB.
f1010
555 triangular wave
B-989
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IRF1010
Abstract: No abstract text available
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IRF1010
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IGBT 600V 12A
Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IGBT 600V 12A
TO-220AB transistor package
ic MARKING QG
ultraFast Recovery Bridge Rectifier
IRF1010
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555 triangular wave
Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UPbF
O-220AB
O-220AB
O-220AB.
555 triangular wave
transistor 45 f 122
Inductive Load Driver
igbt transistor
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Untitled
Abstract: No abstract text available
Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UPbF
O-220AB
O-220AB
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AN-994
Abstract: IRG4BC30U-S m 60 n 03 g10
Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30U-S
AN-994
IRG4BC30U-S
m 60 n 03 g10
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AN-994
Abstract: IRG4BC30U-S
Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30U-S
AN-994
IRG4BC30U-S
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Untitled
Abstract: No abstract text available
Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30U-S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S A 1 048 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1048©) AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AUDIO FREQUENCY APPLICATIONS • Small Package. • High Voltage : V cE O = _ 50V (Min.)
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2SA1048
2SA1048©
2SC2458C0.
2SA1048
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MHQ6100
Abstract: IC AL 6001
Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON
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MHQ6100A
MIL-S-19500/xxx
O-116)
MHQ6100
IC AL 6001
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MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
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b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
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VQE 22
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V
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IRGPH40S
O-247AC
VQE 22
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IRG4BC20W
Abstract: No abstract text available
Text: International I« R Rectifier PD - 9 .1 6 5 2 IRG4BC20W P R E L IM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR Features Ic • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4BC20W
--600V
IRG4BC20W
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6d20
Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT8D20
6D20-
PULSEWIDTHa60
6d20
6D-20
250M
BE20
IGT8E20
VQE 23 E
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Untitled
Abstract: No abstract text available
Text: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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O-22QAB
002fl0Rb
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J 420 G
Abstract: No abstract text available
Text: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies
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pd-9165
IRG4BC40W
--600V
J 420 G
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Untitled
Abstract: No abstract text available
Text: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove
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IRG4BC40W
--600V
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transistor IRG4BC10UD
Abstract: IRG4BC10UD
Text: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC10UD
transistor IRG4BC10UD
IRG4BC10UD
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IOR 451
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC40F
T0-220AB
IOR 451
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transistor iqr
Abstract: g-50Q IRG4BC20U
Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20U
TQ-220AB
transistor iqr
g-50Q
IRG4BC20U
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Untitled
Abstract: No abstract text available
Text: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,
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IRG4BC10KD
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