GE 953 Search Results

bc 541

Abstract: GE capacitors 0280 130 026 GE capacitors GEC004 GE 23a capacitors 0523a 10 micro farad 25 v electrolytic capacitor BB EI 382 0179 BE EI 382 0179 295A6016P33
Contextual Info: GEC 004 2009 Power Electrolytic Capacitors GE Capacitors by Regal-Beloit 1946 West Cook Road, Fort Wayne, Indiana 46818 USA 260 416-5460 Email: capacitors@regalbeloit.com GEC Phone: – 02(260) / 09 416-5400 Fax: www.gecapacitors.com www.gecapacitors.com

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

Contextual Info: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide

S1D15700

Contextual Info: PF952-02 S1C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Current Consumption ● Wide-range Operating Voltage 1.8V to 5.5V ● High Speed Operation in Low Voltage ● A/D Converter

E0C88409

Abstract: SED1635
Contextual Info: PF952-01 E0C88409 8-bit Single Chip Microcomputer ge oltan V o Lowerati ts p c u O od Pr ● Original Architecture Core CPU ● Low Voltage Operation 1.8V min. ● High Speed Operation (0.48µsec/3.0V) ● Built-in LCD Controller ● Built-in Touch Panel Controller

Contextual Info: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line

Contextual Info: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

Contextual Info: That LETT mL'fim HEW PA CK A R D Connectorized Single Mode ELEDS Technical Data LST0400 F eatures Description • In d u stry Standard FC and ST C o n n ectors • 1300 nm W avelength • L inew idth <125 nm • High R elia b ility • R ange o f F lan ge O ptions

H11A10

Abstract: aaan D41K1 threshold switch H17A1 BRX 70
Contextual Info: G E SOLID STATE □1 DE I 3 Ö 7 S 0 Ö 1 D O n b T D 0 uptqeiectronlc Specifications 7 ' - V / - S ’3 PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H 11A 10 is a gallium arsenide infrared emitting diode coupled with a silicon

Contextual Info: P S E SOLID STATE 01 DE | 3 ñ 7 S 0 ñ l _ 0 D n f l 7 t i Optoelectronic Specifications. T -m-Z3 Photon Coupled Isolator M CT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-lVansistor , M IL L I M E T E R S M IN The GE Solid State MCT210 is a gallium arsenide, infrared emitting

Contextual Info: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,H11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,

H11F1 HARRIS

Contextual Info: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting

XJ100

Abstract: RG316B
Contextual Info: D 71E SBDnSO □ □ G O ‘3 2 7 bôS Bauform/Style M P o lza h l/N u m b e r o f contacts m ax- 78 N F-Standard + 2 S o nd erkon takte/s p e c ia l con tacts 2 4 N F-Standard + 8 S on d e rk o n ta k te /s p e c ia l contacts Fett ge druckte B estell-N um m ern = Vorzugstypen.

035H

Abstract: IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor VCE 1000V

Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Contextual Info: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

ECG953

Abstract: ecg 223 ecg voltage regulator 3v ECG954 ECG378
Contextual Info: i PHILIPS E C G INC 17E ECG Semiconductors m ? A - bbSBiaû QQ05137 3 ECG 953, ECG 954 Adjustable Pos and Neg Voltage Regulators E C G 9 5 3 - Positive Voltage Regulator E C G 9 5 4 - Negative Voltage Regulator Features • O utput current in e x ce ss of 1 A

Contextual Info: ALLEGRO MICROSYSTEMS INC 33E D 0S0M33fl 0 0 0 5 5 75 1 •A.L GR S L A I'Z Î 953 M ÏK p  88â: COMPEIAN FULL-BRIDGE PWM MOTOR DRIVER NO CONNECTION 5NNECT10N ANODES V REp0R AK E PHASE RC TIMING LOGIC SUPPLY NO CONNECTION Dwg. PM-004 ABSOLUTE MAXIMUM RATINGS

IRG4PC50FPBF

Abstract: 035H IRFPE30
Contextual Info: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

le 78a

Abstract: 035H IRFPE30
Contextual Info: PD - 95398 IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: 11.10.2003 8:06 Uhr Seite C.1 Terminals / Tension clamp connection Terminals / Z-Series Overview / Z-Series C.2 - C.3 Feed-through terminals Standard model Roof-Style C.4 - C.17 C.18 - C.23 PE terminals Standard model Roof-Style C.24 - C.31 C.32 - C.37 Disconnect terminals