GE SEMICONDUCTOR DATA SCR Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Prefarrtd D o vi» N-Channel Enhancement-Mode Silicon Gate This high volta ge M O S FET uses an advanced te rm inatio n scheme to provide enhanced voltage-blocking capability without

2N7332

Contextual Info: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.

mtp2p

Abstract: 2p50e
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata Sheet M TP 2P 50E TM O S E -F E T ™ P o w er Field E ffe c t T ransistor M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS This high volta ge M O S FET uses an advanced term ination

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dynam ic S w itch PLL C lock D river M PC993 The M PC 993 is a PLL c lo ck drive r de sign ed spe cifically for redundant clo ck tree designs. T h e d e vice rece ives tw o differential LVP EC L clo ck sig nals from w hich it ge ne rates 5 new differential LVP EC L c lo ck outputs.

B1545

Abstract: b1545 motorola b1545 to220
Contextual Info: MOTOROLA Order this document by MBRF1545CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res

BRF2045

Contextual Info: MOTOROLA Order this document by MBRF2045CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res

B745 MOTOROLA

Abstract: b745 diode b745
Contextual Info: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE S ch o ttky Pow er R ectifier MBRF745 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res

Contextual Info: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF1045 The S W IT C H M O D E P ow er R ectifier em p lo ys the S cho ttky B arrier p rincip le in a large area m e ta l-to -s ilic o n po w e r diode. S ta te - o f- th e - a r t ge o m e try fea tu res

IC400

Abstract: CM400HA-24A
Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

cm500ha-34a

Contextual Info: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

IC600

Abstract: CM600HA-24A CM600HA-24
Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM400HA-24A ●I C ….………………….……. 400 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

Mitsubishi Electric IGBT MODULES

Abstract: IE-500 ie500
Contextual Info: MITSUBISHI IGBT MODULES CM500HA-34A HIGH POWER SWITCHING USE INSULATED TYPE CM500HA-34A ●I C ….………………….……. 500 A ●V CES …………….….…. 1700 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

CM600HA-24A

Abstract: IC600
Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ●I C ….………………….……. 600 A ●V CES …………….….…. 1200 V ●Flat base Type Copper non-plating base plate No accessory (terminal screw) attach

eupec FZ 800 R 16

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

IC2500

Abstract: FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

fz 79 1500

Abstract: KF423
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E

ic 7800

Abstract: 16KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1