GE SPM Search Results

S5 100 B112 MT RELAY

Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
Contextual Info: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1

FX631

Abstract: FX631D5 FX631DW FX631P
Contextual Info: CML Semiconductor Products PRODUCT INFORMATION FX631 Lo w-V olta ge SPM Detector Low-V w-Volta oltag Publication D/631/8 July 1998 Features Detects 12kHz and 16kHz SPM Frequencies Lo wP ower 3.0 VoltMIN <1.0mA Low Po Operation High Speec hband Rejection

FX631

Abstract: FX631D5 FX631DW FX631P
Contextual Info: CML Semiconductor Products PRODUCT INFORMATION FX631 Lo w-V olta ge SPM Detector Low-V w-Volta oltag Publication D/631/8 July 1998 Features Detects 12kHz and 16kHz SPM Frequencies Lo wP ower 3.0 VoltMIN <1.0mA Low Po Operation High Speec hband Rejection

SPM28C10M

Abstract: SOP-48 SOP48
Contextual Info: PF716-03 SPM28C10M 1K-Bit EEPROM ge lta o V n de tio Wi pera cts O odu Pr ● Low Supply Current ● Low Voltage Power Operation ● 1,024-Wordsx1-bit • DESCRIPTION The SPM28C10M is a 1,024words×1bit electrically programmable writable/erasable CMOS EEPROM. The data

marking code C1E SMD ic

Contextual Info: Pre limin ar y Data Sh ee t, Ver sion 2.0 1, Ap r 0 6 TDA 5230 TDA 5231 Un iv e r sal L ow Po we r ASK/ FSK Sing le C on v ersion Mu lti-Ch ann el Ima ge -R ej e c t R ec e i v er w i th Digit al Base ban d Processin g W i re l e s s C o n t r o l Co mpo ne nts

Contextual Info: TM Power-SPM FP7G150US60 tm Transfer Molded Type IGBT Module General Description Fairchild’s New IGBT Modules Transfer Molded Type provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor

FP7G150US60

Contextual Info: Power-SPMTM FP7G150US60 tm Transfer Molded Type IGBT Module General Description Fairchild’s New IGBT Modules Transfer Molded Type provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor

SOP48

Abstract: SPM28C10M 063 8pin fxs 100 10
Contextual Info: EPSON P F 716-03 SPM28C10M 1K-BIt EEPROM Low Supply Current Low Voltage Power Operation 1,024-Wordsx1 -bit I DESCRIPTION The SPM28C1OM is a 1,024wordsx1 bit electrically program m able w ritable/erasable C M O S EEPROM . The data is p ro gram m ed w itten w ithout chip erase or e rase cycle.

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G50-60 TECHNICAL DATA DATA SHEET 687, REV. A Three-Phase IGBT Bridge 600 VOLT, 50 Amp ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=25 C UNLESS OTHERWISE SPECIFIED PARAM ETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage

IGBT DRIVER SCHEMATIC 3 PHASE

Abstract: IGBT DRIVE 500V 300A SPM2G48-60 SPM2G65-60 SPM2G75-60 SPM2G85-60 SPM4G48-60 SPM6G48-60 SPM6G50-60 SPM6G65-60
Contextual Info: SPMXGXX-XX SENSITRON SEMICONDUCTOR STANDARD IGBT MODULES WITH GATE DRIVERS FEATURES: • High Power Density • Low Saturation Voltage V CE(SAT ) • Low Thermal Resistance (R θJC) INDUSTRIAL IGBT PRODUCT MAP IC (Amps) CONFIGURATION VECS (V) 25 50 100 HalfBridge

CW2013

Abstract: sic marking e6
Contextual Info: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO

FGD2N40

Abstract: FGD2N40L
Contextual Info: FGD2N40L 400V N-Channel Logic Level IGBT Features General Description „ VCE SAT = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.

igbt pdp pulse module ic

Abstract: FVP18030IM3LSG1 buffer ic igbt display plasma
Contextual Info: PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs It is an advanced samart power module SPMTM that Fairchild has newly developed and designed to provide very compact and optimized performance for the sustaining circuit of PDP

transistors sot-223 06a

Abstract: SGM2N60UF
Contextual Info: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

G2N60

Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
Contextual Info: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

SGW13N60UF

Contextual Info: SGW13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

90A IGBT

Abstract: tu marking FGA90N30
Contextual Info: FGA90N30 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300v data sheet

Abstract: FGA90N30
Contextual Info: FGA90N30 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.

90A IGBT

Abstract: igbt 300V 10A datasheet FGP90N30 FGP90N30TU
Contextual Info: FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.

6414a

Abstract: FGP7N60RUFD FGP7N60RUFDTU
Contextual Info: FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features Applications • High speed switching Motor controls and general purpose inverters. • Low saturation voltage : VCE sat = 1.95 V @ IC = 7A Description • High input impedance Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides

FGA90N30

Contextual Info: FGA90N30 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential.

120N30

Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

igbt 300V 10A datasheet

Abstract: FGA90N30D
Contextual Info: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.

3 phase IGBT gate driver 1200

Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE