GE-46 TRANSISTOR Search Results

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

Contextual Info: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor c905

Abstract: igbt c905 IRGBC30KD2 C909 D-12 qe r 908
Contextual Info: International i«rJRectifier P D - 9.1107 IRGBC3ÖKD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c VcES = 6 0 0 V • Short circuit rated -1 Ops @125°C, V GE = 15V • Swiiching-loss rating includes ail "tail" tosses

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

GE10001

Abstract: GE10000 GE10009 10-009 GE10007 GE10002 GE10003 GE10004 GE10008 GEI0004
Contextual Info: HIGH SPEED GE10000GE10009 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 10-20 AMPS, 175 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and

850 U01

Abstract: transistor 66a
Contextual Info: International g ü Rectifier IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT P D - 9.1138 Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

SOLID STATE INC

Abstract: MJ15022 15024 J15022 J15024
Contextual Info: B SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area

c845

Abstract: c846 transistor D-12 IRGBC30K C-844
Contextual Info: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

c845

Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c845

Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
Contextual Info: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

C-865

Abstract: smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

317A-01

Abstract: 2G0909
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w

AN-994

Abstract: IRGBC30K-S SMD-220 GC smd transistor
Contextual Info: PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

2n1547

Abstract: 2N1711 to3 LM390
Contextual Info: 2N1547 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1547 Availability Online Store

2N158

Contextual Info: 2N158 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N158 Availability Online Store Diodes

PXF-10

Abstract: 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply
Contextual Info: Signal Converters & Isolators Process Signal To Frequency Converter PXF-10 DESCRIPTION WIRING DIAGRAM Signal converter for the conversion of an analogue process signal to a pulsating 50% duty cycle transistor output. A typical application would be to convert an analogue signal from a probe to a pulsating

IRGBC30KD2-S

Abstract: GC smd diode AN-994 SMD-220
Contextual Info: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

MHT5002

Abstract: MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: SGW15N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,

AD166

Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT

transistor c905

Contextual Info: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

Contextual Info: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes