GEN. PURPOSE DIODE Search Results

ECG584 schottky

Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Contextual Info: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114

DIODE SW-05

Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAS21 Preliminary DIODE GEN ERAL PU RPOSE DI ODES ̈ DESCRI PT I ON The UTC BAS21 is a general purpose diode using UTC’s planar technology to provide customers with high current capacity and high switching speed. ̈ FEAT U RES

Contextual Info: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)

Contextual Info: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen­ eral purpose silicon NPN transistors on a common mono­ lithic substrate. Two of the transistors are internally con­

2010 4n35

Abstract: 4n35 4N35 circuits optocouplers 4n35
Contextual Info: 4N35 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 0.69 Opt. Page 1 of 1 Enter Your Part # Home Part Number: 4N35 Online Store 4N35 Diodes GEN ER A L Transistors PU R POS E 6 -PIN PH O TO T RA N SIS T OR OPT OC O U PLER S Integrated Circuits Optoelectronics

LT111A

Contextual Info: uim TECHNOLOGY LT111A/LT311A LM111/LM311 Voltage Comparator F€OTUR€S DCSCfflPTIOn • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM 111 gen­ eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off­

fairchild 9314

Abstract: D type latch ScansUX986
Contextual Info: TTL/MSI 9314 QUAD LATCH DESC RIPTIO N — The MSI 9314 is a m u ltifu n ctio n a l 4 -B it Latch. The latch is designed fo r gen­ eral purpose storage applications in high speed digital systems. A ll inputs feature diode clamping to reduce negative line transients. A ll outputs have active p u ll-up c irc u itry to provide high capac­

LM311N-8

Abstract: LM311J-8 LM311J8 LM311T appli note LM311 T05M PLIC LT111X LT111A
Contextual Info: LT111A / L T 3 1 1A LM 111/LM311 / T u r m TECHNOLOGY V oltage C om parator F€flTUR€S D c s c n iP T io n • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM111 gen­ eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off­

YTS4403

Contextual Info: YTS4403 SILICON PNP EPITAXIAL TYPE U n i t in m m FOR GEN ERA L PURPOSE USE S WIT CHI NG AN D A MPL I F I E R +05 APPLICATIONS. FEATURES: •Low Leakage Current : IC E V = - 1 0 0 n A M a x . , Ig v = 1 0 0 n A ( M a x . ) @ V c e =-35V, V b e =0.4V • Excellent DC Current Gain Linearity

common anode schottky to220

Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)

D 92 M - 02 DIODE

Abstract: 110MP fast diode 1.5 A diode d07 Super matched pair 1a fast diode
Contextual Info: DIODES AND HECTII NTE Type No. Material Description and Application Case Style Diag. No. Maximum Average Forward Current Amps Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) P RV If If s m vF *fT 0.5

Z6 DIODE

Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

diode ECG125

Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Contextual Info: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time

BFW12

Abstract: bc264c BFT46
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR AMPLIFIERS rating type number characteristics ± V DS max. ’d ss Ciss typ. c rss l v f s l 1 pF) typ.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

metal rectifier diode

Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
Contextual Info: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)

NTC 2R5-S237

Abstract: 86H-5410B LFR2205B smd diode bc 2R5-S237 zener diode c18 st 86H-5410 atx 400w circuit schematic arcotronics mkp L6563
Contextual Info: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This

86H-5410

Abstract: LFR2205B arcotronics 1uf 450V MKP PQ40-500 delta 400w atx power supply capacitor 470nf 50v smd diode bc atx 400w circuit schematic 2R5-S237 EPCOS 470
Contextual Info: EVAL6563-400W L6563 400 W FOT-controlled PFC pre-regulator Data Brief General description The board implements a 400 W, wide-range mains input, PFC pre-conditioner suitable for ATX PSU, flat screen displays, game console. The low-cost L6563 can be used at such power level thanks to fixed-off-time control. This

DIODE S2E

Contextual Info: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218

erc12 diode

Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
Contextual Info: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight

Contextual Info: ASSR-4110 and ASSR-4120 General Purpose, Form A, Solid State Relay 400V/0.12A/25Ω Data Sheet Description Features The ASSR-41x0 Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The

mosfet based power inverter project

Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
Contextual Info: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.