GENERAL NPN 3A HIGH SPEED Search Results

2SC4546

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

transistor npn high speed switching 5A 600v

Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

2SA1826

Abstract: 2SC4730
Contextual Info: Ordering number:ENN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

2SA1826

Contextual Info: Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

2TMA-4

Abstract: 2SA1826 2SC4730
Contextual Info: Ordering num ber: EN3878 2SA1826/2SC4730 SAMYO PNP/NPN Epitaxial Planar Silicon Transistors i 100V/3A Switching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatures

transistor 2sD1060

Abstract: npn transistor 3A 2SD1060
Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

2SD1060

Abstract: transistor 2sD1060
Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor http://onsemi.com – 100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications

C4730

Abstract: CQ 730 2SA1826 2SC4730 MR100-A
Contextual Info: Ordering number: EN3878 2SA1826/2SC4730 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications A pplications •Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatu re s ■Low collector-to-emitter saturation voltage.

419B-02

Abstract: SMD310
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

HN1B01FDW1T1

Abstract: 318F SMD310
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

SMD310

Abstract: SC-88 package
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

On Semiconductor MARKING DIAGRAM SOD-123

Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

318F

Abstract: HN1B01FDW1T1 SMD310
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: 3A

SMD310

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200~400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

GESD1060

Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,

GI1060

Abstract: GIJ1060
Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,

Contextual Info: Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE sat NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A

2SC4130

Contextual Info: SavantIC Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC3832

Contextual Info: Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1