GENERAL NPN 3A HIGH SPEED HIGH HFE Search Results

2SC4546

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

transistor npn high speed switching 5A 600v

Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

2SA1826

Abstract: 2SC4730
Contextual Info: Ordering number:ENN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

2SA1826

Contextual Info: Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

Contextual Info: Ordering number : EN2539C 2SB1215/2SD1815 Bipolar Transistor http://onsemi.com – 100V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications

C4730

Abstract: CQ 730 2SA1826 2SC4730 MR100-A
Contextual Info: Ordering number: EN3878 2SA1826/2SC4730 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications A pplications •Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F eatu re s ■Low collector-to-emitter saturation voltage.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

transistor 2sD1060

Abstract: npn transistor 3A 2SD1060
Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

2SD1060

Abstract: transistor 2sD1060
Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A 1 APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

GESD1060

Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,

GI1060

Abstract: GIJ1060
Contextual Info: ISSUED DATE :2005/09/05 REVISED DATE : GI1060 NPN EPITAXIAL PLANAR T RANSISTOR Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features Low Collector-Emitter Saturation Voltage : VCE sat =0.4V (Max.) @ IC=3A, IB=0.3A,

Contextual Info: Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE sat NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

2SD837

Abstract: "Audio Power Amplifiers" Darlington NPN Silicon Diode data transistor darlington for High Power Audio general npn 3A high speed high hfe
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min. @IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

NPN Transistor VCEO 80V 100V

Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF

sem 5020

Contextual Info: ^ General ^ 2 ^ Sem iconductor ^ - Industries, Inc. HIGH POWER NPN twitch P GSTU15018 G S T U 1 5020 /tft TRANSISTORS NPN 180, 200, V 15 AMP SWITCHING tf — 200ns TYPICAL The GSTU series of NPN transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R®

2SC4130

Contextual Info: SavantIC Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC3832

Contextual Info: Inchange Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1

2SC4130

Abstract: ic 3A hfe 500 2SC413
Contextual Info: Inchange Semiconductor Product Specification 2SC4130 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC3832

Abstract: general npn 3A high speed
Contextual Info: SavantIC Semiconductor Product Specification 2SC3832 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

BDW42

Abstract: BDW47 147 B transistor npn DARLINGTON 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A

rl66

Abstract: 2SC3890 Rl-66 TO-220F
Contextual Info: Inchange Semiconductor Product Specification 2SC3890 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base