GENERAL SEMICONDUCTOR DIODE 400 Search Results

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

Contextual Info: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g

bat41 600

Abstract: bat41 Diode BAT41
Contextual Info: BAT41 Vishay Semiconductors formerly General Semiconductor Schottky Diode DO-204AH DO-35 Glass Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,

bat41 600

Abstract: BAT41 Diode BAT41 DO-204AH LL41
Contextual Info: BAT41 Vishay Semiconductors formerly General Semiconductor Schottky Diode DO-204AH DO-35 Glass Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,

KTX411T

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX411T EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A

KTX311T

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES ・Including two TR, Diode devices in TSV. 1 DIM MILLIMETERS _ 0.2 A

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

Contextual Info: SEMICONDUCTOR KTX311T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 Including two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A 2.9 +

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

Contextual Info: SEMICONDUCTOR KTX411T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 Including two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A 2.9 +

1bl3

Abstract: KTX402U
Contextual Info: SEMICONDUCTOR KTX402U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.

SOT-23 J1C

Contextual Info: SDS19 Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1C □ SDS19 3 1 1. Anode

KTX301U

Abstract: TRANSISTOR A1 TR
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. C A A1 2 C ᴌSimplify circuit design.

SDS21WK

Contextual Info: SDS21WK Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Device Marking Code 1 Package J2K □ SDS21WK 3 1 1 2

Contextual Info: SDS19D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J1 □ SDS19D 1. Anode

Contextual Info: SDS19WM Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1M □ SDS19WM 3 1 1 2

SDS19WA

Contextual Info: SDS19WA Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1A □ SDS19WA 3 1 2 3

Contextual Info: SDS20WM Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J3M □ SDS20WM 3 1 1 2

Contextual Info: SDS21WA Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J2A □ SDS21WA 3 1 3 1

MV104 "direct replacement"

Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.

Contextual Info: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode

SDS20WK

Contextual Info: SDS20WK Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J3K □ SDS20WK 3 1 2 1

marking A1 TRANSISTOR

Abstract: COB diode H4B1 KTX401U Transistor hFE CLASSIFICATION Marking CE
Contextual Info: SEMICONDUCTOR KTX401U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.