GENERAL SEMICONDUCTOR DIODE MARKING S2 Search Results

SSF4953

Abstract: SOP-8 4953 circuit 4953 G2 marking 1324NS
Contextual Info: SSF4953 DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G2 G1 S1 S2 Schematic diagram

SOT23-6

Abstract: SSF2485 SOT23-6 MARKING g2 Marking D2 SOT23-6 SOT23-6 g2 D1 Marking SOT23-6 TOP marking sot23-6
Contextual Info: SSF2485 D1 DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. D2 G1 G2 S1 S2 Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 150mΩ @ VGS=-2.5V

SOP-8

Abstract: SSF3637
Contextual Info: SSF3637 DESCRIPTION D1 The SSF3637 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G2 G1 S1 S2 Schematic diagram

TRANSISTOR SMD MARKING CODE

Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Contextual Info: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose

FAIRCHILD SMD MARKING

Abstract: 1N4148WS Small Signal Diodes 1N4448WS fairchild smd marking code 1N914BWS smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS
Contextual Info: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • • • • • • • Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 General Purpose Diodes Fast switching Device TRR < 4.0 ns Very Small and Thin SMD package Moisture Level Sensitivity 1

toshiba diode 1A

Abstract: 1SS268
Contextual Info: 1SS268 TOSHIBA 1 S S2 6 8 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

S2055N equivalent

Abstract: S2055N transistor s2055n 2-16E3A 2-16E3A package Toshiba S20
Contextual Info: S2055N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055N COLOR TV HORIZONTAL OUTPUT APPLICATIONS z High Voltage : VCES = 1500 V z Low Saturation Voltage : VCE sat = 5 V (Max.) z High Speed : tf = 0.3µs (Typ.) Unit: mm z Built−in Damper Type

S2055N equivalent

Abstract: s2055n transistor s2055n tv ic equivalent 2-16E3A Toshiba S20 s2055n transistor
Contextual Info: S2055N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055N COLOR TV HORIZONTAL OUTPUT APPLICATIONS High Voltage : VCES = 1500 V Low Saturation Voltage : VCE sat = 5 V (Max.) High Speed : tf = 0.3µs (Typ.) Unit: mm Built−in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

Contextual Info: – SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310Q S2 SOD-523 unit : mm 1.50~1.70 1.10~1.30 0.70~0.90 0.32 Max. Outline Dimensions

N-Channel 2.5V

Abstract: fdc6000nz
Contextual Info: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch Q1 is designed with specific emphasis on

DIODE s2l

Abstract: S2L DIODE "S2L" DIODE DIODE "s2l" diode SOD-323 DIODE s2l 11 marking code 17 surface mount diode schottky diode DIODE CMDSH2-4L
Contextual Info: Central CMDSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-4L is a HIGH CURRENT, LOW VF 40 volt Schottky diode packaged in a space saving SOD-323 surface mount case. This

Contextual Info: S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop

8205 A mosfet

Abstract: 8205 mosfet
Contextual Info: Datasheet N-Channel Enhancement Mode Power MOSFET TDM8205 Description D1 D2 The TDM8205 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 2.5V. This device is suitable for use as a

FDS4935

Contextual Info: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Contextual Info: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a

S17B

Abstract: 1N5817 593D 594D LM2767 LM2767M5 LM2767M5X MA05B MBR0520LT1 Switched Capacitor Voltage Converter
Contextual Info: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.

s17b

Abstract: S17-B S3 marking DIODE s4 vishay sanyo low esr capacitors top marking c2 sot23 LM2767 LM2767M5 LM2767M5X MA05B
Contextual Info: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.

Contextual Info: FDMA2002NZ Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS ON = 123 m: @ VGS = 4.5 V „ RDS(ON) = 140 m: @ VGS = 3.0 V solution for dual switching requirements in cellular

6892a

Contextual Info: FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

RCA 4559 NO

Abstract: FDS4559 QT Optoelectronics
Contextual Info: FDS4559 60V Complementary PowerTrenchMOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

diode s2m

Contextual Info: S2A, S2B, S2D, S2G, S2J, S2K, S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

LP2980-3.3

Abstract: nichicon pf SERIES LP2980-3 LM2765 SOT23-6 LP2980-5.0 MOSFET N SOT23-6 S3 marking DIODE S4 DIODE schottky s4 vishay
Contextual Info: LM2765 Switched Capacitor Voltage Converter General Description Features The LM2765 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide up to 20 mA of output current.

S17B

Abstract: LM2767 LM2767M5 LM2767M5X MA05B
Contextual Info: LM2767 Switched Capacitor Voltage Converter General Description Features The LM2767 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +1.8V to +5.5V. Two low cost capacitors and a diode are used in this circuit to provide at least 15 mA of output current.