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    GENERAL SEMICONDUCTOR MARKING SJ DIODE Search Results

    GENERAL SEMICONDUCTOR MARKING SJ DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SJ DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application


    Original     		PDF B5817WS/B5818WS/B5819WS OD-323 OD-323 C/10s 278mg B5817WS B5818WS B5819WS S1404015

    Untitled

    Abstract: No abstract text available
    Text: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package


    Original     		PDF B5817WS/B5818WS/B5819WS OD-323 OD-323 C/10s B5817WS B5818WS B5819WS S1404015

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz


    Original     		PDF TT4-EA-11555 DZ2J130ï UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11798 Revision. 3 Product Standards Zener Diode DZ2S1300L DZ2S1300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz


    Original     		PDF TT4-EA-11798 DZ2S130ï DZ2J130 UL-94

    Untitled

    Abstract: No abstract text available
    Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).


    Original     		PDF SBS822 ENA1504 A1504-3/3

    A1504

    Abstract: SBS822 marking SJ
    Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).


    Original     		PDF SBS822 ENA1504 A1504-3/3 A1504 SBS822 marking SJ

    Untitled

    Abstract: No abstract text available
    Text: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).


    Original     		PDF SBS822 ENA1504 A1504-3/3

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15µA)


    Original     		PDF SBE807 ENA1055A A1055-6/6

    A1055

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055A SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers Features • • Low switching noise Low reverse current (VR=16V, IR max=15 A)


    Original     		PDF ENA1055A SBE807 017A-001 SBE807-TL-E A1055-6/6 A1055

    SBE807

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


    Original     		PDF SBE807 ENA1055 125formation A1055-3/3 SBE807

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


    Original     		PDF SBE807 ENA1055 A1055-3/3

    Untitled

    Abstract: No abstract text available
    Text: SBE807 Ordering number : ENA1055 SANYO Semiconductors DATA SHEET SBE807 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, and choppers . Features • • Low switching noise. Low reverse current (VR=16V, IR max=15 A).


    Original     		PDF SBE807 ENA1055 A1055-3/3

    marking code SJ general

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature


    Original     		PDF 2002/95/EC) DZ2J130 marking code SJ general

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F378 Parallel D Register with Enable General Description Features The ’F378 is a 6-bit register with a buffered common Enable This device is similar to the ’F174 but with common Enable rather than common Master Reset Y Y Y Y Y Commercial Military


    Original     		PDF 74F378 74F378PC 16-Lead 16-Lead 5962-8855501EA 54F378DMQB

    74F169PC

    Abstract: No abstract text available
    Text: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for


    Original     		PDF 74F169 modulo-16 74F169PC 16-Lead 962-86072012A 54F169 96286072012A 54F169DMQB 5962-8607201EA 74F169PC

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S

    marking s3g

    Abstract: SMC MARKING SJ marking code S3j S3M vishay JESD22-B102D J-STD-002B dc s3m sj smc s3j marking VISHAY MARKING sm
    Text: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • • • • •


    Original     		PDF DO-214AB UL-94V-0 J-STD-002B JESD22-B102D 06-Sep-05 marking s3g SMC MARKING SJ marking code S3j S3M vishay JESD22-B102D dc s3m sj smc s3j marking VISHAY MARKING sm

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT


    OCR Scan     		PDF 1SV216

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage


    OCR Scan     		PDF 1SV228 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -


    OCR Scan     		PDF 1SV217

    NA42

    Abstract: No abstract text available
    Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV303 C2V/C25V NA42

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 DIODES FOR PROTECTING AGAINST ESD Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.


    OCR Scan     		PDF 01ZA8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)


    OCR Scan     		PDF 1SV302