GENERAL SEMICONDUCTOR MARKING SR Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

5007

Abstract: SRA2202 SRC1202 SUR551H
Contextual Info: SUR551H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1202 chip and SRA2202 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR551H 51H

gi diode

Abstract: SOT-353 transistor sra2203 CHIP TRANSISTOR marking code GI 5007 src1203 SRA2203 SUR498H
Contextual Info: SUR498H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1203 chip and SRA2203 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking Package Code

SRA2207

Abstract: SRC1204 SUR496H
Contextual Info: SUR496H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General Purpose Transistor Features • Both SRC1204 chip and SRA2207 chip in SOT-353 package • With Built-in Bias Resistors Ordering Information Type NO. Marking SUR496H Package Code

Contextual Info: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices

Contextual Info: | V > llC R O I\ J 16K M T5C 1601 X 1 SRAM 16K X 1 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 8’ , 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

Contextual Info: ADVANCE |V/|C=RON MT5LC512K8C3 512K X 8 SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE • High speed: 20, 25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3Vpower supply • Easy memory expansion with CE and OE options

Contextual Info: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM |V |IC = R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options

Contextual Info: ADVANCE MT5C1M4A1 1 MEG X 4 SRAM SRAM 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • H igh speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply _ • Easy memory expansion with CE and OE options

Contextual Info: ADVANCE SRAM 512Kx 8 SRAM FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible

Contextual Info: ADVANCE SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible

Contextual Info: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM M IC R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options

Contextual Info: MICRON TECHNOLOGY IN C SSE D b l U S M Ì 0 0 D 3 b lb lis • FIRN ADVANCE MT5LC512K8C3 512K X B SRAM M IC R O N 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT (Top View • High speed: 2 0,25,35 and 55ns • High-performance, low-power, CMOS double-metal

a5433

Contextual Info: ADVANCE SRAM 256Kx 16 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,2 5 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins • Single +5V ±10% power supply_ • Easy memory expansion with CE and OE options

y1 marking code transistor

Abstract: marking Y1 transistor SOT-353 transistor marking y1 SOT-353 marking y1 SRA2205 SUR499H transistor sot353
Contextual Info: SUR499H Semiconductor Epitaxial Planar PNP Transistor Descriptions • General purpose application • Two SRA2205 chips in SOT-353 package Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process

FCAS20DN60BB

Abstract: SPM20BC Fairchild UL file IGBT fairchild ccd IGBT application note asymmetric bridge converter for srm
Contextual Info: FCAS20DN60BB Smart Power Module for SRM Features General Description • 600V-20A 2-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection FCAS20DN60BB is an advanced smart power module for SRM drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives

Contextual Info: 05172 SR70 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The SR70 is an ultra low capacitance steering diode array. Designed for protection against Electrostatic Discharge ESD , Electrical Fast Transients (EFT) and secondary lightning threats, this device is ideal for use in high-speed signal

marking b7t

Contextual Info: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions

TC75W60FK

Abstract: TC75W60FU
Contextual Info: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)

KST-J023-000

Abstract: Marking JW IC marking jw SRC1211 SUR541EF
Contextual Info: SUR541EF Semiconductor NPN Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Two SRC1211 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR541EF Marking JW Package Code SOT-563F Outline Dimensions

Contextual Info: SRA2211M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRA2205

Abstract: SUR532H
Contextual Info: SUR532H Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2205 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. SUR532H Marking 32H Package Code SOT-353

Contextual Info: SRC1210M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process