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    GENERAL SEMICONDUCTOR MARKING UJ SMA Search Results

    GENERAL SEMICONDUCTOR MARKING UJ SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING UJ SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGD3N60UNDF

    Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
    Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us


    Original     		PDF FGD3N60UNDF FGD3N60UNDF O-252 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING

    FGAF40N60UFTU

    Abstract: No abstract text available
    Text: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGAF40N60UF FGAF40N60UF FGAF40N60UFTU

    G2N60

    Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
    Text: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGM2N60UF OT-223 SGM2N60UF SGM2N60UFTF G2N60 G2N6 G2N60UF transistors sot-223 06a sGm2N60

    FGA40N60UFD

    Abstract: FGA40N60
    Text: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGA40N60UFD FGA40N60UFD FGA40N60UFDTU FGA40N60

    Untitled

    Abstract: No abstract text available
    Text: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,


    Original     		PDF FGP10N60UNDF FGP10N60UNDF O-220

    GENERAL SEMICONDUCTOR MARKING UJ

    Abstract: No abstract text available
    Text: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGAF40N60UFD FGAF40N60UFD FGAF40N60UFDTU GENERAL SEMICONDUCTOR MARKING UJ

    Untitled

    Abstract: No abstract text available
    Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		PDF FGA25S125P

    2SC3441

    Abstract: 2SA1366
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.


    OCR Scan     		PDF 2SC3441 2SC3441 2SA1366. 600mA 150MHz SC-59 O-236 Taa25 2SA1366

    GENERAL SEMICONDUCTOR MARKING UJ

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2836 MC2836 GENERAL SEMICONDUCTOR MARKING UJ

    z107

    Abstract: marking mitsubishi
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2835 FOR GENERAL SWITCHING APPLICATION SIUCON EPITAXIAL TYPE SERIES TYPE) DESCRIPTION Mitsubishi MC2835 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode.it is designed for general switching application.


    OCR Scan     		PDF MC2835 MC2835 z107 marking mitsubishi

    MC911

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC911 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TVPE COMMON ANODE) DESCRIPTION Mitsubishi M C 9 1 1 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING unit


    OCR Scan     		PDF MC911 MC911

    marking mitsubishi

    Abstract: MC2846 UJ DIODE MARKING
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2846 MC2846 marking mitsubishi UJ DIODE MARKING

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2844 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2844 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING . ± 0.2 2 1 type diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2844 MC2844

    MC283-1

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2831 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2831 is a super mini package plastic seal type silicon epitaxial Unitimm OUTLINE DRAWING 2-5 -0.3 type diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2831 MC2831 MC283-1

    mc2850

    Abstract: 1F marking
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.


    OCR Scan     		PDF MC2850 MC2850 SC-70 1F marking

    2SJ145

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch


    OCR Scan     		PDF 2SJ145 2SJ145 SC-70 10mVrms.

    2SK3321

    Abstract: 2SK332
    Text: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)


    OCR Scan     		PDF 2SK3321 2SK3321 2SK332

    2SA1255

    Abstract: 2SC3138
    Text: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 2.5-0.3 High Voltage • • VCBO = 200 V (Max.) Vf!F,n = 200 V (Max.) Small Flat Package Complementary to 2SA1255


    OCR Scan     		PDF 2SC3138 2SA1255 O-236MOD SC-59 2SC3138

    2SC3326

    Abstract: marking cc
    Text: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5


    OCR Scan     		PDF 2SC3326 2SC3326 marking cc

    2SA1255

    Abstract: 2SC3138
    Text: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255


    OCR Scan     		PDF 2SC3138 2SA1255 O-236MOD SC-59 961001EAA1 2SA1255 2SC3138

    mc2848

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2848 F O R H IG H S P E E D S W IT C H IN G A P P L IC A T IO N _ S IL IC O N E P IT A X IA L T Y P E (C O M M O N A N O D E ) D E S C R IP T IO N Mitsubishi MC2848 is a super mini package plastic seal type silicon epitaxial


    OCR Scan     		PDF MC2848 MC2848

    Untitled

    Abstract: No abstract text available
    Text: T P C 8 0 1 3 —H TO S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED U-MOSDI T P C 8 0 1 3 —H High Speed and High Efficiency DC-DC Converters Note Book PC .Portable Equipments Applications Unit in mm -Compact and thin package, and a small mounting area


    OCR Scan     		PDF

    2SA1366

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3


    OCR Scan     		PDF 2SA1366 2SA1366 2SC3441. -600mA 150MHz SC-59 O-236

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2845 is a super mini package plastic seal type silicon epitaxial Unittmen OUTLINE DRAWING 2 . 1+ 0.2 type double diode.it is designed for general switching application.


    OCR Scan     		PDF MC2845 MC2845 SC-70