GENERAL SEMICONDUCTOR MARKING UJ SMA Search Results

FGD3N60UNDF

Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
Contextual Info: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us

2SC3441

Abstract: 2SA1366
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.

GENERAL SEMICONDUCTOR MARKING UJ

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.

z107

Abstract: marking mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2835 FOR GENERAL SWITCHING APPLICATION SIUCON EPITAXIAL TYPE SERIES TYPE) DESCRIPTION Mitsubishi MC2835 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode.it is designed for general switching application.

MC911

Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC911 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TVPE COMMON ANODE) DESCRIPTION Mitsubishi M C 9 1 1 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING unit

marking mitsubishi

Abstract: MC2846 UJ DIODE MARKING
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2844 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2844 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING . ± 0.2 2 1 type diode,especially designed for high speed switching application.

MC283-1

Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2831 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2831 is a super mini package plastic seal type silicon epitaxial Unitimm OUTLINE DRAWING 2-5 -0.3 type diode,especially designed for high speed switching application.

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

mc2850

Abstract: 1F marking
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.

2SJ145

Contextual Info: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SJ145 is a small type resin sealed P channel junction type FET. It OUTLINE DRAWING 2.1 ±0.2 is especially designed for low frequency voltage amplify, analog switch

2SK3321

Abstract: 2SK332
Contextual Info: TOSHIBA TENTATIVE 2SK3321 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3321 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • • • Small Package High Input Impedance : Iq SS = —1 nA Max. (Vq s = —30 V)

2SA1255

Abstract: 2SC3138
Contextual Info: T O S H IB A 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS + 0.5 2.5-0.3 High Voltage • • VCBO = 200 V (Max.) Vf!F,n = 200 V (Max.) Small Flat Package Complementary to 2SA1255

2SC3326

Abstract: marking cc
Contextual Info: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5

2SA1255

Abstract: 2SC3138
Contextual Info: 2SC3138 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S C 3 1 38 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm + 0.5 • High Voltage : V c b q —^OOV (Min.) V C E O = 200V (Min.) • Small Flat Package • Complementary to 2SA1255

mc2848

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2848 F O R H IG H S P E E D S W IT C H IN G A P P L IC A T IO N _ S IL IC O N E P IT A X IA L T Y P E (C O M M O N A N O D E ) D E S C R IP T IO N Mitsubishi MC2848 is a super mini package plastic seal type silicon epitaxial

G2N60

Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
Contextual Info: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: T P C 8 0 1 3 —H TO S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH SPEED U-MOSDI T P C 8 0 1 3 —H High Speed and High Efficiency DC-DC Converters Note Book PC .Portable Equipments Applications Unit in mm -Compact and thin package, and a small mounting area

FGA40N60UFD

Abstract: FGA40N60
Contextual Info: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,

GENERAL SEMICONDUCTOR MARKING UJ

Contextual Info: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

2SA1366

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2845 is a super mini package plastic seal type silicon epitaxial Unittmen OUTLINE DRAWING 2 . 1+ 0.2 type double diode.it is designed for general switching application.