GENERAL SEMICONDUCTOR SM 3B DIODE Search Results

GENERAL SEMICONDUCTOR SM 3b diode

Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
Contextual Info: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200

1N5221B

Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5263B f221b
Contextual Info: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200

GENERAL SEMICONDUCTOR SM 3b diode

Abstract: 1N5985B 1N5988B 1N6020B 1N5990B 1N5993B 555 fairchild 1N5996B 1N5987B 1N5991B
Contextual Info: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C

1N5993B

Abstract: 1N6020B 1N6005B 1N5988B 1N5999B 1N6006B 1N5990B 1N5994B 1N5995B 1N5996B
Contextual Info: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C

Contextual Info: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

laser diode 1550 ns single mode

Abstract: GENERAL SEMICONDUCTOR SM 3b diode 1550 laser diode dfb laser diode 1550 Semiconductor Laser International 1550 communication laser diode dfb 1550 nm laser diode DFB Laser-Diode 1550 nm laser diode philips 075mW
Contextual Info: Philips Components c q f s i /d A -D E V E L O P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice. BURIED HETEROJUNCTION InGaAsP DFB LASER DIODE

QA-16

Contextual Info: SEMICONDUCTOR icoo Revised May 1999 TM FST3125 Quad Bus Switch General Description switch is OPEN and between th e tw o ports. The Fairchild Switch FST3125 provides fo u r high-speed C M OS TT L-com patible bus sw itches. The low on resis­ tance of the sw itch allows inputs to be connected to o ut­

C857

Abstract: c858 C857B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BWT1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SO T -32 3/SC -7 0 which is

c858

Abstract: C585A motorola c858 BCB57 C858A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC856ALT1,BLT 1 BC857ALT1 ,BLT1 BC858ALT1 ,BLT1, CLT1 M o to rola P referre d D e v ice s 2 M AXIM UM R A T IN G S EMIT1 Rating Collector-Em itter Voltage C o lle c to r-B a s e Voltage

Contextual Info: TO SHIBA TC74VHCT86AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT86AF, TC74VHCT86AFN, TC74VHCT86AFT QUAD EXCLUSIVE OR Note The JEDEC SOP (FN) is not available in Japan GATE The TC74VHCT86A is an advanced high speed CMOS QUAD

BC857ALT1

Abstract: BC858ALT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ran sisto rs BC856ALT1 ,BLT1 BC857ALT1 ,BLT1 BC858ALT1 ,BLT1, CLT1 PNP Silicon Motorola Preferred Devices MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit v CEO -65 -45 -3 0 V VCBO -80 -50 -30 V v EBO

Contextual Info: R C H II_ D EM IC O N D U C T O R t 74F153 Dual 4-Input Multiplexer General Description Features The F153 is a high-speed dual 4 -input m ultiplexer with com ­ mon select inputs and individual enable inputs fo r each se c­ tion. It can select tw o lines of data from fo u r sources. The

General Semiconductor diode marking sma

Abstract: ON SEMICONDUCTOR 613 top marking 293 1A444
Contextual Info: PRODUCT INFORMATION 840nm 1A444 VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi­ tudinal mode, ensuring stable cou­

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

Contextual Info: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications

Fabry-Perot-Laser-Diode

Abstract: A3 DIODE GENERAL SEMICONDUCTOR SM 3b diode
Contextual Info: Fiber Optics Low Power Triport-BIDI V23875-T1161-C1xx Optical Triplexer Component 1310 nm Tx / 1310 nm Digital Rx with 622 Mbit/s, 3.3 V TIA / 1555 nm Analog Video Rx Preliminary Data The V23875-T1161-C1xx is an optical triplexer component designed for full-duplex digital

Contextual Info: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857

CD74FCT253

Contextual Info: H A F R F R IS S E M I C O N D U C T O R CD74FCT153T, CD74FCT253T, CD74FCT2153T, CD74FCT2253T High-Speed CMOS Dual 4-Input Multiplexer December 1996 Features Description • Advanced 0.8 micron CMOS Technology The C D74FCT153T, CD74FCT253T, CD74FCT2153T and

tl271

Abstract: hbs 650 d150 fet tl27 54ACQ 102447
Contextual Info: June 1990 54ACQ/74ACQ153 • 54ACTQ/74ACTQ153 Quiet Series Dual 4-Input Multiplexer General Description Features The ’A C G /’ACTQ153 is a high-speed dual 4-input m ultiplex­ er w ith com m on se le ct inputs and individual enable inputs fo r each section. It can select tw o lines ot data from four

MIL-STD-750 METHOD 2036 conditions E

Abstract: 1N6672 1N6672R 1N6673 1N6673R 1N6674 1N6674R
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. INCH-POUND MIL-PRF-19500/617D 17 April 2009 SUPERSEDING MIL-PRF-19500/617C 3 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,

DIODE 1N3768-R

Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

TC74VHC10F

Abstract: TC74VHC10FN TC74VHC10FT
Contextual Info: TO SHIBA TC74VHC10F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC10F, TC74VHC10FN, TC74VHC10FT TRIPLE 3 -INPUT NAND Note The JEDEC SOP (FN) is not available in Japan GATE The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

Contextual Info: V23806-A84-C1 SIEMENS Single Mode 155 MBd ATM 2x9Transceiver D im ensions in m m inches (11.5 max) .453 max. V ie w Z (Lead cross section and stan doff size) (0.73+0.1 ) .028±.004 PC board thickness (2) .080 (1.5+0.1) .06+.004 _OpticaL Centerline rr L

74ALS03

Abstract: TC74VHC00 TC74VHC03F TC74VHC03FN TC74VHC03FT
Contextual Info: TOSHIBA TC74VHC03F/FN/FT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74VHC03F, TC74VHC03FN, TC74VHC03FT QUAD 2 -INPUT NAND GATE OPEN DRAIN The TC74VHC03 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.