GERMANIUM AUDIO AMPLIFIER DIAGRAM Search Results

180NM cmos process parameters

Abstract: 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors CMOS Stacked RF 130NM cmos process parameters AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: Motivation for RF Integration W H I T E P A P E R Motivation for RF Integration Introduction While CMOS technology has made great strides in its ability to fabricate radio frequency RF circuitry, many RF chip designers have yet to take advantage of this

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

LA4160

Abstract: Germanium audio Amplifier diagram germanium diode equivalent TR13 TR17 TR22 GERMANIUM DIODE diode germanium catalog 12800T audio preamplifier circuit diagram
Contextual Info: Ordering number:ENN870D Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Features Package Dimensions • A single package contaning preamplifier, ALC circuit, power amplifier. • Preamplifier with high gain, and power amplifier with high gain and output.

1S188 Diode

Abstract: 1S188 LA4160 CNF7047 DS442 TR13 TR17 TR22 Germanium Amplifier Circuit diagram 1S1882
Contextual Info: Ordering number : EN870E Monolithic Linear IC LA4160 Single-Chip Tape Recorder Audio System Overview LA4160 is Single-chip tape recoder audio system. A single package contaning preamplifier, ALC circuit, power amplifier. Features • Preamplifier with high gain, and power amplifier with high gain and output.

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

Avalanche photodiode APD

Abstract: germanium photodiode PIN photodiode germanium photodiode "interference filter" Photodiodes Germanium receiver photodiode preamplifier AGC photovoltaic receiver 1550 pin Photodiode preamp avalanche photodiodes PREAMP circuit diagram
Contextual Info: APPLICATIONS OPTOELECTRONICS Joachim Krug PIN photodiodes with transimpedance amplifiers for optical networks: Compact pre-amp modules immune to interference The first amplifier stage of a receiver circuit in optical networks is usually a transimpedance amplifier. It has

DF1084

Abstract: driver AM 5766 transistor df1084 transistor intercom circuit in3754 CA3020 2N2869 2N3053 equivalent AM 5766 ca3020 equivalent
Contextual Info: Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers Application Note April 1994 AN5766.1 The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits shown for the CA3020. The CA3020, on the other hand, has

DF1084

Abstract: IN3754 driver AM 5766 transistor df1084 AM 5766 coil 2N3053 class B push pull power amplifier class A push pull power amplifier 2N3053 equivalent Stancor output transformer
Contextual Info: Harris Semiconductor No. AN5766.1 Harris Intelligent Power April 1994 APPLICATION OF THE CA3020 AND CA3020A MULTIPURPOSE WIDE-BAND POWER AMPLIFIERS Authors: W.M. Austin and H.M. Kleinman The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits

DF1084

Abstract: AM 5766 transistor df1084 driver AM 5766 coil 2N3053 Germanium audio Amplifier diagram 2.5W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors transistor intercom circuit audio amplifier class A schematic AN5766
Contextual Info: [ /Title AN57 66 /Subject (Application Of The Ca302 0 And Ca302 0a Multipurpose Wideband Power Amplifiers) /Autho r () /Keywords (Intersil Corporation, Semiconductor, wideband power amplifier, wide band power Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers

Contextual Info: November 3, 2008 LMH6554 2.5 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high

pnx8316

Abstract: tda10046 china car DVD player program ic latest research topics in microcontroller technology PNX83 industrial automation using cellphone bgb202 tda10046 tuner TDA8920B nexus s smartmx
Contextual Info: World News Volume 14 Semiconductors Number 1 Distribution Focus February - March 2005 Inside World News page Identification 2&3 Research 3 Distribution 4 to 8 MultiMarket Semiconductors 9 Automotive 10 Connectivity 10 Products in brief 11 Communications 12

BFU730

Abstract: BFU690 364B AN11024 0603CS BUF690 GRM1555 network analyzer measure antenna NXP antenna design guide 2.5 ghz lna transistor
Contextual Info: AN11024 SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz Rev. 1 — 24 March 2011 Application note Document information Info Content Keywords LNA, 2.33 GHz, BFU690, SDARS Abstract This application note provides circuit, layout, BOM and performance

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the

uPC3224TB

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

LEE14A

Contextual Info: February 5, 2009 LMH6554 2.5 GHz Ultra Linear Fully Differential Amplifier General Description Features The LMH6554 is a high performance fully differential amplifier designed to provide the exceptional signal fidelity and wide large-signal bandwidth necessary for driving 8 to 16 bit high

6179-7

Abstract: C3K marking led marking c1g
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

HS350

Abstract: PC3237TK MARKING 6N
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the mobile digital TV etc. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: AN11066 SDARS active antenna 1st stage LNA with BFU730F, 2.33 GHz Rev. 1 — 25 October 2011 Application note Document information Info Content Keywords LNA, 2.33 GHz, BFU730F, SDARS. Abstract This document provides circuit, layout, BOM and performance information

old nec tv diagram

Abstract: HS350 PC3237TK
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R04003

Abstract: uPC8215TU HS350 upc8215tu-e2-a R0400
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8215TU is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.