GERMANIUM DIODE 1N270 Search Results

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

diode germanium 1n270

Abstract: 1N270 germanium diode "Germanium diode" 1N270 diode germanium Germanium diode IV germanium diode junction capacitance Detectors - Diode Germanium Diode 1n270 1N270 diode
Contextual Info: E L E C T R O N I C S , INC. 44 FARRAND STREET BLOOMFIELD, NJ 07003 973 748-5089 http ://www. nteinc. com 1N270 Germanium Diode Optimized for Radio Frequency Response Description: The 1N270 is a Germanium Diode in a DO-7 type glass package that can be used in many AM, FM

Q265

Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
Contextual Info: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES

Germanium DO-35 DIODE

Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
Contextual Info: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster

Contextual Info: 1N270+JAN Diodes Germanium Diode Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50

Contextual Info: 1N277 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 500 mA p e a k If Vr 110 V P diss 80 mW @ Tc = 25 °C Tj -65 °C to +85 °C T stg -65 °C to +85 °C

diode germanium 1n270

Abstract: 1N277 "Germanium Diode" 1N270 diode
Contextual Info: 1N277 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 5OO mA If i peak Vr 11O V Pd is s 8O mW @ Te # 25 0C Tj -65 °C to +85 0C Ts t g -65 0C to +85 0C

diode germanium 1n270

Abstract: 1N270 diode 1N270 "Germanium Diode" Germanium Diode 1n270
Contextual Info: 1N270 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 200 mA If p e a k Vr 100 V Pd is s 80 mW @ Te # 25 °C Tj -65 0C to +85 0C Ts t g -65 0C to +85 0C

diode germanium 1n270

Abstract: 1N270 1N270 diode diode germanium 1n283 diodes 1n270 Germanium Diode 1n270 diode 1N270 1N270 diode germanium 1N277 gold bonded germanium diode 1N270
Contextual Info: Data Sheet 1N270 1N277 1N281 Central' 1N283 GERMANIUM DIODE Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-7 CASE Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR INIOOA, 1N270, 1N277, 1N281, 1N283 t y p e s a r e G old Bonded Germaniun

Contextual Info: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k

1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

1N270

Abstract: 1N270 equivalent diode germanium 1n270 1N270 diode equivalent 1N270 diode germanium diode diode 1n270 diode piv 100 500ma "Germanium Diode"
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings

1N270

Abstract: diode germanium 1n270 "Germanium Diode"
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength

to3a

Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
Contextual Info: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A

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diode germanium 1n270

Abstract: Germanium DO-35 DIODE 1n270 Germanium Schottky diode 1950S 1N277 CDSH270 Switching diode 50V 200mA 1N270 diode diodes 1n270
Contextual Info: V Datasheet fnV il l~Pf 1 W S llliiS I 1 Semiconductor Corp. CDSH270 SCHOTTKY DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH270 is a Silicon Schottky diode specially designed to replace

diode 1N645

Abstract: 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34
Contextual Info: 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f - <^£micorzclucéoi± _ T e le x 948318 100 Eqmes Street (617 872-7520 Framingham, Massachusetts 01701 Low Current Diodes (DO-7) V RM (r e p ) V o lta V o lt ' GDC645 150 1N645 Type No. I0

SCR TRIGGER PULSE TRANSFORMER

Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
Contextual Info: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is

PHILIPS SCR

Abstract: BYV1030 equivalent 1N270 diode equivalent
Contextual Info: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

Amperex hl

Contextual Info: AN31 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

AN763

Abstract: scr gate drivers ic 1N270 diode equivalent diodes 1n270 SCR TRIGGER PULSE TRANSFORMER BYV10-30 diodo Zener 4.1v TC426 diode germanium 1n270 germanium transistor pnp
Contextual Info: AN763 Latch-Up Protection For MOSFET Drivers Author: Cliff Ellison Microchip Technology Inc. Source P+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

1N270 diode equivalent

Abstract: BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270
Contextual Info: M AN763 Latch-Up Protection For MOSFET Drivers Author: Microchip Technology Inc. Source P+ VS+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note

diodo Zener 4.1v

Abstract: diode 1N270 Germanium Diode 1n270 1N270 QQQQ332 Germanium audio Amplifier diagram diode germanium 1n270
Contextual Info: BSE D • bTTOMS? QQQQ332 S ON CHIP SYSTEMS ~v OJRTO âK JEO fllU SIC . SPiOflUTÖ 110 Highland Ave. Lois Gatos C l. 95030, USA Tél. {408 395-3350 pP Controllable Dynamic Signal Processor The CEM 3391 Is a complete Features: system lor the dynamic signal