GERMANIUM DRIFT TRANSISTOR Search Results

SGA1263Z

Abstract: SGA1263
Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

MARKING HBT

Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

SGA-1263

Abstract: SGA-1263Z BY 356
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

trace code marking RFMD

Abstract: SGA-1263 SGA-1263Z
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

SGA-1263Z

Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

Contextual Info: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially

YSI 44018

Abstract: YSI-44018 hp5082-2810 0-10v ramp ic Germanium diode 0.2V varactor diode sample problems hp5082 1N4148 LM10 voltage reference IC LM10
Contextual Info: ' LU IL/M<_ ! •' TECHNOLOGY Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery powered operation of electronic appara­ tus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications

SGA-1163

Abstract: SGA-1163-TR1
Contextual Info: Preliminary SGA-1163 Product Description Sirenza Microdevices’ SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation of

EDS-100935

Abstract: SGA-1263
Contextual Info: Preliminary SGA-1263 Product Description Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. This RFIC is a 2-stage design that provides high isolation of

Contextual Info: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar

hp5082-2810

Abstract: YSI 44018 HP5082 2N3904 LM10 LT1034 varactor diode sample problems YSI-44018 Widlar 1N914
Contextual Info: Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery-powered operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candidates for battery operation. In some circumstances, due to space, power or reliability considerations,

marking A12

Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

SGA-1263

Abstract: Stanford Microdevices 4 ghz
Contextual Info: Preliminary Product Description SGA-1263 Stanford Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. DC-4000 MHz Silicon Germanium

NSL5027

Abstract: transistor LM340 LM340 voltage regulator LM340 AN-103 national 12V 10A voltage regulators NPN Transistor 10A 24V LM320 voltage regulator Lm324 comparator datasheet dual tracking voltage regulator ic 10A
Contextual Info: Introduction The LM340-XX are three terminal 1.0A positive voltage regulators, with preset output voltages of 5.0V or 15V. The LM340 regulators are complete 3-terminal regulators requiring no external components for normal operation. However, by adding a few parts, one may improve the transient response, provide for a variable output voltage, or increase the

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

IC 7413

Abstract: NSL5027 equivalent Z340 LM340-XX LM324 DIL TTL 74137 transistor LM320K-15 transistor 7413 NSL5027 Germanium power diode
Contextual Info: LM340 Series Three Terminal Positive Regulators National Semiconductor Application Note 103 George Cleveland August 1980 LM340 Series Three Terminal Positive Regulators INTRODUCTION The LM340-XX are three terminal 1 0A positive voltage regulators with preset output voltages of 5 0V or 15V The

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

esaki Diode

Contextual Info: E li OPTOELECTRONICS IMPROPER TESTING METHODS FOR LED DEVICES AN603 In any manufacturing operation it is essential that the materials used in the fabrication process meet the minimum quality specifications of the device under production. To that end, prudent manufacturers establish

Contextual Info: BOUMAR/UHITE TECHNOLOGY T o dY J ISbBfaTfl 0DG005D 4 T -58-11-13 m C u s t o m D e v i c e s , la t e . Applications The 2802 positive voltage regulator, and the 2803 negative voltage regulator are designed to power analog or d ig ita l circu its. H y b r iid F C ir c a itl

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

CQY78

Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Contextual Info: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge

"Audio Power Amplifiers"

Abstract: darlington transistor for audio power application Germanium Power Diodes thermal resistance TO metal package aluminum kovar darlington power transistor power led heat sink
Contextual Info: PACKAGE INFORMATION THERMAL DESIGN FOR PLASTIC ICs THERMAL DESIGN FOR PLASTIC INTEGRATED CIRCUITS Proper thermal design is essential for reliable operation of many electronic circuits. Under severe thermal stress, leakage currents increase, materials decompose, and components drift in value or fail.