GERMANIUM SMALL SIGNAL TRANSISTORS Search Results

cross reference zener diodes

Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers

Contextual Info: Table of Contents Page Index / Cross Reference 1 Small Signal Transistors 53 Power Transistors 81 Junction FETs 97 Silicon Diodes 101 Germanium Diodes 105 Zener Diodes 107 Transient Voltage Suppressors TVS 119 Current Limiting Diodes 125 Rectifiers 147 Chip Form For Hybrid Applications

AC187

Abstract: AC187 188 AC188 GERMANIUM AC132 AC188K AC188 ac187 AC125 AC181 GERMANIUM SMALL SIGNAL TRANSISTORS AC187K
Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Type Polar­ ity yC3o ^£•0 Vc, V Max y Max Max V h" /c B O @ y ca V Cob Pf Max yA Max Min Max mA 8 18 3550-140 40- 300' 20 150 212 30-60 50-100 75-150 125-250 100 100 100 100 40 40 40 40 Pack Outline

OC74

Abstract: OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72
Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max M in Max Cal, mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15 10

2N398A

Abstract: Germanium Transistors 2N396 2N965
Contextual Info: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970

2n2635

Abstract: 2N985 2N461 GERMANIUM SMALL SIGNAL TRANSISTORS 2n4525 2N3449 2N398A 2N427 2N963 2n964
Contextual Info: GERMANIUM PNP MESA TRANSISTORS Type 2N828A 2N829 2N808 2N960 2N961 2N962 2N962 2N963 2N964 2N964 2N964A 2N965 2N966 2N967 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 2N985 2N2635 2N3449 VcBO y Max f^Emo V Max 15 15 30 15 12 12 12 12 15 15 15 12 12 12 15

nte102

Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Contextual Info: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:

cross reference zener diodes

Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
Contextual Info: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37

Contextual Info: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially

2N439

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors. Their basic NPN nature (high mobility electron flow) renders

Contextual Info: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.

BJW transistor

Contextual Info: TELEPHONE: 201 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Germanium Transistors 2M1T92 absolute maximum ratings: (25°C) Voltage Collector to Base Collector to Emitter Emitter to Base Currantt Powtr Vrw, (RUK ^ 10K)

NTE100

Abstract: NTE101
Contextual Info: NTE100 PNP & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

transistor c114

Abstract: C114 Transistor HA1319 for C114 transistor transistor c119 transistor c114 transistors R107 diode GERMANIUM SMALL SIGNAL TRANSISTORS GERMANIUM TRANSISTOR C109 capacitor
Contextual Info: H A I 3 1 9 AUDIO AM PLIFIER FOR TEPE RECORDER • FEATURES • No transformer required thanks to complementary output circuit • Excellent equalizer characteristics • Low-distortion recording even if volumeless because of AGC circuit wide dynamic range.

AN545A

Abstract: motorola application notes AN-489 motorola AN-545A motorola AN490 motorola AN489 AN489 schematic diagram video television Motorola mc1330 MC1350
Contextual Info: AN-545A Application Note r TELEVISION VIDEO IF AMPLIFIER USING INTEGRATED CIRCUITS Prepared by Applications Engineering T his applications note considers the requirements of the video IF am plifier section of a television receiver, and gives working circuit schematics using integrated

YSI 44018

Abstract: YSI-44018 hp5082-2810 0-10v ramp ic Germanium diode 0.2V varactor diode sample problems hp5082 1N4148 LM10 voltage reference IC LM10
Contextual Info: ' LU IL/M<_ ! •' TECHNOLOGY Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery powered operation of electronic appara­ tus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

hp5082-2810

Abstract: YSI 44018 HP5082 2N3904 LM10 LT1034 varactor diode sample problems YSI-44018 Widlar 1N914
Contextual Info: Application Note 15 November 1985 Circuitry for Single Cell Operation Jim Williams Portable, battery-powered operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candidates for battery operation. In some circumstances, due to space, power or reliability considerations,

smps circuit diagram

Abstract: mc12140 20100ct motorola analog ICs vol.2 NBSG16 OC192 smps based 45 watt inverter AND8071 NBSG14 spice germanium diode
Contextual Info: Q U A R T E R L Y T E C H N O L O G Y A N D A P P L I C AT I O N S M A G A Z I N E ON-Display THIRD QUARTER 2001 Vol. 2, No. 2 This Quarter. FEATURES Leaky Electricity 3 SiGe Activates the Next Generation of Broadband Communication Devices 5 POWER MANAGEMENT

toshiba laptop battery pack pinout

Abstract: GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM
Contextual Info: 4 volume 4 A publication of IBM Microelectronics IBM Helps Juniper Networks Produce Revolutionary Internet Backbone Router Nancy Adinolfe, R. K. Anand, and Alison Seaman In This Issue Introduction Fourth Quarter 1998, Vol. 4, No.4 1 IBM Helps Juniper Networks Produce

tl7726

Abstract: tl7726q diode IN4001 diode IN4001 equivalent IN4001 diode IN4001 diode INFORMATION TLC1543 Application Note IN4001 IN4148 TLC1543
Contextual Info: TL7726 Hex Clamping Circuit Application Report 1994 Printed in U.S.A. 0694–AL SLAA004 TL7726 Hex Clamping Circuit IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version

IN4001

Abstract: IN4148 SLSS004 TL7726 TL7726Q TLC1543 tl7726c
Contextual Info: TL7726 Hex Clamping Circuit SLSS004 June 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version

germanium transistor pnp smd

Abstract: TL7726 EB202 EB202E Germanium Schottky diode
Contextual Info: EB202E Voltage Limiter EB202E PRECISION HEX VOLTAGE LIMITER TL7726 Author: Eilhard Haseloff Translated by: Tristram Pye Date: March 12, 1992 Rev.: * Revised Januar 16, 1995 Texas Instruments 1 Applikationslabor EB202E Voltage Limiter In many applications, it is unavoidable that some semiconductor components

Hall sensors Siemens

Abstract: KSY14 TESLA KSY14 Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon
Contextual Info: KSY14 – the Ultra-flat, Versatile Hall Sensor Reprint∗ from Siemens Components XXV 1990 . No.5. Page 167 to 172 Author: Martha Wolfrum Hall sensors are semiconductors that are sensitive to a magnetic field and can produce voltages in the presence of constant or varying magnetic fields. The new