GERMANIUM TRANSISTORS AC Search Results

GERMANIUM TRANSISTORS AC Result Highlights (5)

Part	Manufacturer	Description
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

GERMANIUM TRANSISTORS AC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1N118 Abstract: selenium diode Contextual Info: 1N118 Germanium Diode 1.08 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N118 Online Store 1N118 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	1N118 1N118 com/1n118 selenium diode	PDF
2n539 Abstract: 2N540 Contextual Info: , tfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA PHP GERMANIUM AUL?Y JUNCTION POWER TRANSISTORS 2N539 2N538A 2N539: fhesein^rjneucali) se<iieu germanium vnr power transistors are designed for use in	Original	2N539* 2N538A 2N539: 2N539A 2N540 2N540A^ -200ma 2n539 2N540	PDF
transistor ac 152 Abstract: AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121 Contextual Info: ESC ]> • 023SbGS 000402^ 3 H S I E 6 ./ PNP Germanium Transistors A C 121 _ SIEMENS AKTIEN6ESELLSCHAF -— — fo r AF, driver and output stages o f m edium perform ance A C 121 and AC 152 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 metal case	OCR Scan	235b05 Q60103-D121 152IV Q60103-X152-D Q60103-E121 Q6010E AC162 fl535b05 0Q0M03M T-29-tl transistor ac 152 AC1* germanium transistor transistor ac 127 AC121 transistor 152 M xl 1507 germanium transistor ac 125 OC 76 germanium transistor AC152 Q60103-F121	PDF
KJE transistor Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1 Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case	OCR Scan	0235bOS Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC151, KJE transistor KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor	PDF
AC181 Abstract: AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Contextual Info: ESC D • û235bDS Q0Q403S ^ « S I E G 1 PNP Germanium Transistors AC 151 SIEMENS AKTIENGESELLSCHAF 9 04035- 2- A— 151T - Not for new design fo r AF input and driver stages o f m ediu m perform ance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case	OCR Scan	023SbGS Q0Q403S Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC181 AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1	PDF
Newmarket Transistors Abstract: NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72 Contextual Info: N ew m arket Sem iconductors Germanium A lloy Transistors P N P Germanium A llo y Transistors REFERENCE T A B LE Maximum ratings. C haracteristics at T 4 = 25°C. Code ACY ACY ACY ACY ACY ACY ACY ACY 17 18 19 20 21 22 39 40 BVC eo BVcao BV ebo IcM V V V A	OCR Scan	27714R 27716E 27717C 7718A 27719X 27710F 15627E 15628C 5629A 15631B Newmarket Transistors NKT Semiconductors Newmarket nkt NKT216 2N1305 NKT213 2N1309 germanium transistors NPN ACY21 OC72	PDF
2n2137 Contextual Info: , Una. <£tmL-donctwsto 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6008 FAX: (973) 3764980 2N2137 (GERMANIUM) PNP germanium industrial power transistors for driver applications in high reliability equipment. MAXIMUM RATINGS	Original	2N2137 2n2137	PDF
transistor TF78 Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202	PDF
1401-1407 Abstract: 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 1401-1407 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data	PDF
UD1001 Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA	PDF
transistor k1502 Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029	PDF
2N1029 Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N1029 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A	PDF
k 151 transistor Abstract: transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1 Contextual Info: SSC T> m 0235bD5 0004035 ISI EG AC 151 AC 1 5 1 r PNP Germanium Transistors SIEMENS AKTIENúESELLSCHAF C 04035 T - 9 - / / Not for new design fo r AF inp u t and driver stages o f m e d iu m p erfo rm an ce AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case	OCR Scan	235bD5 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC161. k 151 transistor transistor ac 151 AC161 AC151 transistor AC151 Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-F Q60103-X151-F1	PDF
2N5508 Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N5508 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551	PDF

78m5 Abstract: PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 78m5 PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24	PDF
NKT275 Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275 Contextual Info: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO	OCR Scan		PDF
STC1015E Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 STC1015E DTS104 ASY82 DTS103 DTS106 DTS108 NKT12	PDF
2N4241 Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S	PDF
2SB367 Abstract: TRANSISTOR 2sb367 2SB368 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d Contextual Info: HITACHI TRANSISTORS — FOR MEDIUM POWER AMPLIFIER USE— The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The depend	OCR Scan	2SB367 2SB368 150mmx 50mmx50mmxl TK2395, TRANSISTOR 2sb367 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d	PDF
A400M Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438 Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 A400M ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438	PDF
GT123 Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285 Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan	NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285	PDF
kt420 Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26 Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS	OCR Scan		PDF
2SC102 transistor Abstract: 2N2342 2sc102 TK30556 2N2902 M10A Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C	OCR Scan		PDF
2N1011 Abstract: marking 67A Contextual Info: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)	OCR Scan	MIL-S-19500/67A MIL-T-19500/67 50-WATT 2N1011 -65to 5961-AO78 2N1011 marking 67A	PDF

GERMANIUM TRANSISTORS AC Search Results

GERMANIUM TRANSISTORS AC Result Highlights (5)

GERMANIUM TRANSISTORS AC Datasheets Context Search

1N118

2n539

transistor ac 152

KJE transistor

AC181

Newmarket Transistors

2n2137

transistor TF78

1401-1407

UD1001

transistor k1502

2N1029

k 151 transistor

2N5508

78m5

NKT275

STC1015E

2N4241

2SB367

A400M

GT123

kt420

2SC102 transistor

2N1011