GEZ DIODE Search Results

5SBB 20T1500

Abstract: 5SBB 20T1200 5SBD 05T1300 20T1800 5SBD 05T1400 5SBA 20T0800 20T0500 5SBB 20T2200 20T1500
Contextual Info: B R E A K O V E R _ D I O D E S Diffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. Thyristor protection by emergency firing. - Diffundierte pnpn-Struktur, wird durch Überspannungen gezündet.

GEZ DIODE

Abstract: "Temperature Switch" transistor 152 M
Contextual Info: Presspacks Stacks Outlines Accessories Explanations 60 K 0.024 W G = 3 kg M12 for W1C-circuits K 0.024 W G = 3 kg for B- and M-circuits ohne Rohrnippel gez. ø12 27 26 80 185 150 14 26 14 2 2) 3) 17 30° Temperature Switch 65 17 1 6.5 4.2 17 2) 152 5 l=*)

GEZ DIODE

Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

GEZ DIODE

Abstract: 4-KD20 GEZ 26 42kD
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

Gex DIODE

Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

GEX 51 DIODE

Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

kuka

Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Contextual Info: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5

bfm 2 TERMINAL DIODE

Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

bu 450 GDF

Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

bu 450 GDF

Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

GEZ DIODE

Abstract: E10 M DIODE
Contextual Info: * typical luminous spectrum Wavelength [nm| Colour coordinates lF = 20mA; TA = 25°C x = 0,31 ± 0,06 y = 0,32 ± 0,08 Lampensockel nach DIN EN 60061-1: E10 Lamp base in accordance to DIN EN 60061-1 : E10 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.

Diode GFK

Abstract: GFX DIODE BJE 80 diode Diode BFM bfm 2 TERMINAL DIODE GGT DIODE Diode GEG Diode GFK 42 bem diode GEZ DIODES
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

EBT BA9S LED

Abstract: BA9S LED EBT GEZ DIODE led green lamp 6VAC
Contextual Info: 0 10 max * typical luminous spectrum Polycarbonat weiß / polycarbonate white Polycarbonat farbig / polycarbonate coloured W avelength nm Colour coordinates (lF = 20mA; TA = 25°C) x = 0,31 ±0,06 y = 0,32 ±0,08 Lampensockel nach DIN EN 60061-1: BA9s Lamp base in accordance to DIN EN 60061-1: BA9s

GEK DIODES

Abstract: Diode GFK Diode BFX 514 GEZ DIODES BDP 282 DIODE BFM DIODE BFT marking code GGP DIODE MARKING GEK GFX DIODE
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

marking code BFK

Abstract: GFX DIODE Diode GFK DIODE BJE gfp 35 GFM 78 GGT DIODE ON on 440 gex diode BFR 30 transistor GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

Contextual Info: Lampensockel nach DIN EN 60061-1: E10 Lamp base In accordance to DIN EN 60061-1: E10 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA - 25°C. Bestell-Nr.

dc optronic gmbh

Contextual Info: * typical luminous spectrum Wavelength [nm| Colour coordinates lF = 20mA; TA = 25°C Lampensockel nach DIN EN 60061-1: BA9s Lamp base in accordance to DIN EN 60061-1: BA9s x = 0,31 ±0,06 y = 0,32 ±0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen.

GEZ DIODES

Abstract: GEZ 63 DIODES GEZ 304 DIODES
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

GEZ DIODES

Abstract: bgy 44
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

BEZ DIODES

Abstract: marking GFQ marking Bdy
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

MCD330

Contextual Info: 0 6,1 max. Polycarbonat farbig / polycarbonate coloured Lampensockel nach DIN EN 60061-1: S5,7s Lamp base in accordance to DIN EN 60061-1: S5,7s Elektr. und optische Daten sind bei einer Umgebungstemperatur von Ty = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA = 25°C.

Contextual Info: 0 6,1 max. Polycarbonat farbig / polycarbonate coloured * typical luminous spectrum XU LO co Polycarbonat weiß / polycarbonate white & Wavelength [nm] Colour coordinates lF = 20mA; TA = 25°C Lampensockel nach DIN EN 60061-1 : W2 x 4,6d Lamp base in accordance to DIN EN 60061 -1 : W2 x 4,6d

GEZ DIODE

Contextual Info: typical luminous spectrum 0 3,8 A - Polycarbonat farbig / polycarbonate coloured / lF = 20mA LO "J 0 0,5 ! \ \V - / m A co T co ! T a = 25°C - CO coi. 600 Wavelength 2,54 [nm] Colour coordinates lF = 20mA; TA = 25°C x = 0,31 ± 0,06 yX= 0,32 ± 0,08 Elektr. und optische Daten sind bei einer Umgebungstemperatur von Tu = 25°C gemessen.

GEZ DIODE

Contextual Info: Elektr. und optische Daten sind bei einer Umgebungstemperatur von Tu = 25°C gemessen. Electrical and optical data are measured at an ambient temperature of TA = 25°C. Bestell-Nr. Part No. Farbe Colour Spannung Voltage Strom Current Lichtstarke Lumi. Intensity