GF38 Search Results

MGFS44V2735

Abstract: Q-35 2.7 3.5 s band
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched

MGFK44A4045

Contextual Info: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters

MGFC42V5964A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK44A4045

Abstract: SCL4035
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC45V5964A

Abstract: IM324
Contextual Info: 27-March&#39;98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched

Contextual Info: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

mgfs44v2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFS45V2735

Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched

MGFC50G

Contextual Info: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2

SSD1963

Abstract: SSD1963QL9 SSD1963 16 bit SSD1963G41
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1963 Advance Information 1215KB Embedded Display SRAM LCD Display Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC42V5964A

Abstract: mgfc42v5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC42V6472A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGFC44V

Abstract: MGFC44V6472
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~

3642G

Abstract: MGFC44V3642
Contextual Info: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2