GG1 DIODE Search Results

M54535P

Contextual Info: I b 3E GG1 S 0 1 Ô E T 4 • H I T 3 b E M 'l ñ S ? M IT S U B IS H I D G T L M IT S U B IS H I BIPOLAR DIG ITA L ICs M54535P L O G IC 7-UNIT 150mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION The M54535P, 7-channel sink driver, consists of 14 NPN tran­

2SK623

Abstract: 200V 50A mos fet
Contextual Info: b lE D • 2SK623 MMTbEGS GG1 3 1 1 D flSb ■ H i m HITA C H I/ O PTO ELEC TR O N IC S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1 Gaie 2 Drain _ 2£ • Low On-Resistance i Flange ) 3. Source • High Speed Switching I Dim ensions in mm I

M54643L

Contextual Info: b3E • [3 2 4 ^ 0 2 7 M IT S U B IS H I GG1 S 2 0 S DGTL Moa M IT 3 ■ M I T S U B I S H I B I P OL AR DI GI TAL ICs M 54643L L O G IC BI-DIRECTIONAL MOTER DRIVER DESCRIPTION The M54643L is a semiconductor integrated circuit capable of directly driving small bidirectional motors.

EM07

Abstract: gg1 diode
Contextual Info: SCHRACK General Purpose Relays Accessories Miniature Relay PT • Easy replacement of relays on a densely packed DIN rail ■ No reduction of protection class or creepage/clearance with plastic retainer ■ Plug-in indicator- and protection modules ■ Retainer clip with ejection function for relays of 29 or 35mm

Contextual Info: SCHRACK General Purpose Relays Interface Plug-in Relay XT • 1 pole 16 A, 2 pole 8 A, 1 CO contact or 2 CO contacts ■ DC- or AC coil, sensitive coil 400 mW ■ Reinforced insulation, protection class II VDE 0700 ■ 4 kV / 8 mm coil-contact ■ Manual test tab, optionally lockable1)

CGY2021G

Abstract: LQFP48 PCA5075 SMD0603
Contextual Info: Philips Semiconductors Objective specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G EN ER A L DESCRIPTION • Pow er Amplifier PA overall efficiency 48% (DCS) The C G Y 2 0 2 1 G is a D C S /P C S cla ss 1 G a A s Monolithic M icrowave Integrated Circuit (MMIC) power amplifier

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G E N E R A L DESCRIPTION • Powsr Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

LQFP-48 footprint

Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power

SZG05A0A

Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-SZG05A0A September 2012 1 www.seoulsemicon.com 서식번호 : SSC- QP- 7- 07- 12 Rev.00 APCPCWM_4828539:WP_0000001WP_000000

ML4412N

Contextual Info: b lE ]> • bBM'ìflST M IT S U B IS H I DOmSES T ib DISC R ETE « n iT S MITSUBISHI LASER DIODES ML4XX2 SERIES SC FOR OPTICAL INFORMATION SYSTEMS ML4012N, ML4102, ML4402, ML4412N, ML4442N type name DESCRIPTION FEATURES ML4XX2 is an AIGaAs semiconductor laser which

MARKING 303 SOT23

Abstract: marking ah3 marking 362 sod-323 Marking af1 marking AK SMV1251-011LF marking ek marking bg1 303 MARKING SOT23
Contextual Info: DATA SHEET SMV1247–SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C

gsm signal amplifier circuit diagram

Abstract: MGD629
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

irf 652

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

Contextual Info: DATA SHEET SMV1247–SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C

SMV1247-SMV1255

Abstract: SMV1251-011LF
Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020

SMV1247-011

Contextual Info: DATA SHEET SMV1247–SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 250 °C

SMV-1249-074LF

Abstract: SMV1251-074LF SMV1249-074LF Smv1249-004lf SMV1251-011LF SMV1249-079LF SMV1255-079LF SOT23 marking GF
Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020

Contextual Info: DATA SHEET SMV1247–SMV1255: Hyperabrupt Tuning Varactors Features Designed for high-volume commercial applications High capacitance ratio, C0.3 V/C4.7 V = 12 typ. ● Multiple packages: SOT-23, SOD-323, SC-70 and SC-79 ● Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C

SMV1251-011LF

Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020

Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020

SMV-1249-074LF

Abstract: marking ek SMV1247-SMV1255 SMV1249-074LF SMV1255-004LF SMV1253-004LF SMV1255-040LF marking 362 sod-323 SMV1247 SMV1247-079LF
Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs • High-volume commercial systems Features • High capacitance ratio: C0.3V/C4.7V = 12 typical • Packages rated MSL1, 260 °C per JEDEC J-STD-020

SZX05A0A

Abstract: UV led diode 320 nm SZG05A0A DIODE BB1 gg1 diode
Contextual Info: Z-Power LED X10490 Technical Data Sheet Pb Free Specification SSC-SZX05A0A Rev.05_110325 SSC Drawn Approval Customer Approval Rev. 05 1 March 2011 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 (Rev.00) Z-Power LED X10490 Technical Data Sheet [ Contents ]

CGY2013G

Abstract: LQFP48 PCA5075 SA1620 SMD0603
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.