GG2SS65 Search Results
GG2SS65 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117 |
OCR Scan |
TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 GG2SS65 |