GHV27100P Search Results

GHV27100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7	Original	CGHV27100 CGHV27100 CGHV27 GHV27100P	PDF
CGHV27100 Abstract: CGHV27 cree rf Contextual Info: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf	PDF
cree rf Contextual Info: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf	PDF
Contextual Info: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7	Original	CGHV27100 CGHV27100 CGHV27 GHV27100P	PDF