GHZ POWER FET Search Results
GHZ POWER FET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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| MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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GHZ POWER FET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TC2896
Abstract: gm 8562 TC289 TC1806
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TC2896 TC2896 TC1806 gm 8562 TC289 | |
TIM1414-4AContextual Info: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package |
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TIM1414-4A ITIM1414-4A MW50290196 TIM1414-4A | |
TIM4951-8Contextual Info: TOSHIBA TIM4951-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package |
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TIM4951-8 2-11D1B) MW50570196 TIM4951-8 | |
TIM1011-10Contextual Info: TOSHIBA TIM1011-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package |
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TIM1011-10 2-11C1B) MW50140196 TIM1011-10 | |
TIM6472-4Contextual Info: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package |
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TIM6472-4 2-11D1B) MW50840196 TIM6472-4 | |
TIM4450-16
Abstract: TPM4450-16
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TIM4450-16 2-16G1B) MW50530196 TPM4450-16 TIM4450-16 | |
TIM4450-8
Abstract: TPM4450-8
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TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8 | |
TIM1414-5Contextual Info: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package |
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TIM1414-5 MW50300196 Tim1414-5 | |
TIM3742-16
Abstract: TPM3742-16
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TIM3742-16 2-16G1B) MW50460196 TPM3742-16 TIM3742-16 | |
TPM3742-8
Abstract: TIM3742-8
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TIM3742-8 2-11D1B) MW50440196 TPM3742-8 TIM3742-8 | |
TIM5359-4Contextual Info: TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 9.0 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package |
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TIM5359-4 2-11D1B) MW50650196 TIM5359-4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1011-8 MW50120196 | |
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Contextual Info: TOSHIBA TIM0910-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G 1dB = 7.5 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM0910-2 TransconductaMW50010196 MW50010196 TIM0910-2 | |
TIM1414-2Contextual Info: TOSHIBA TIM1414-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package |
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TIM1414-2 MW50270196 TIM1414-2 | |
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TIM4951-4Contextual Info: TOSHIBA TIM4951-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package |
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TIM4951-4 2-11D1B) MW50560196 TIM4951-4 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G-|dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM4951-8 MW50570196 D02S405 TIM4951-8 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - GldB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally matched • Hermetically sealed package |
OCR Scan |
TIM5964-8A 2-11D1B) TCH725D QQ22500 | |
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Contextual Info: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM8596-8 2-11C1B) MW51190196 1EH725D | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1414-4 MW50280196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1011-5 MW50110196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1112-4 MW50190196 | |
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Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM0910-10 2-11C1B) MW50050196 | |
TIM1414-4Contextual Info: TOSHIBA TIM1414-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package |
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TIM1414-4 MW50280196 TIM1414-4 | |