GI DIODE Search Results

Contextual Info: SKD 145 SEMIPONT 5 Bridge Rectifiers JB1W JBBW; JUBW RU X GYI Z A@:55 %0+:)*.%0C J GQII GNII J GQII GNII A=- X HP [$C 12U GYP¥GQ 12U GYP¥GN GHII GHII 12U GYP¥GH Symbol Conditions RU =- X HP [$ R]1W .a* Values Units GYI Z =S^ X QP [$_ GI &=S^ X GQP [$_ GI &=S^ X QP [$_ H;O LLL GI &-

Contextual Info: SKD 115 SEMIPONT 5 Bridge Rectifiers JB1W JBBW; JUBW RU X GGI Y A@:55 %0+:)*.%0C J GQII GNII J GQII GNII A=- X HP Z$C 12U GGP[GQ 12U GGP[GN GHII GHII 12U GGP[GH Symbol Conditions Values Units RU =- X HP Z$ GGI Y R¥1W =S] X QP Z$^ GI &=S] X GQP Z$^ GI &=S] X QP Z$^ H;O LLL GI &-

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

Contextual Info: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View

MJDI12

Contextual Info: MJDI12 MJD117 SGS-THOMSON ¡Li @H gI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 (DPAK POWER PACKAGE IN TAPE & REEL

Contextual Info: ¿ = 7 SGS-THOMSON *7 # » TMMBAT 29 MD g @IlLi 'inS®ffl(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter

Contextual Info: rrz SCSTWOMSON l^O !^ iti gíi®ÍMi0!gi 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

marking B33 diode

Abstract: marking thq
Contextual Info: /= T SGS-THOMSON *7#« B!»!llLi f[f3 iD gi TMMBAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS (limiting values

F126

Abstract: 7W237
Contextual Info: SGS’THOMSON 0»ilLIM E!ID gi £ jJ BYT 11 -600 ->1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS­ TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE RATINGS (limithg values

Contextual Info: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 47 BAT 48 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.

Contextual Info: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY

BAT 127

Contextual Info: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.

ESM4045DV

Contextual Info: r^ Z *7 # SGS-THOMSON RfflB gi@llLIÊiri(3 iDes ESM4045DV NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT

Contextual Info: SGS"THOMSON 5 7 . TMMBAT 46 [H g ilLI(g¥lS(S lüia(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low tum-on voltage. ABSOLUTE RATINGS (limiting values) Parameter Symbol V rrm Repetitive Peak Reverse Voltage

Contextual Info: C T SGS-THOMSON ^ 7 #. HD»HLI TO s lfSlD(gi B Y T 12 PI -1000 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance7pF

T0220AC

Abstract: BUH DIODE diode current 1200A DTV32F1500A DTV32-1500A T0-220AC
Contextual Info: ¿ 7 7 SGS-THOMSON llD ©ilLI©TO©E!lD gi DTV32(F -1200A DTV32(F)-1500A (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE For complete specifications refer to "SCHOTTKY RECURER DIODES" FEATURES • HIGH BREAKDOWN VOLTAGE CAPABILITY ■ LOW AND MEDIUM FREQUENCY OPERATION

Contextual Info: SGS-THOMSON ^•7#. HD gœilLiOT iD(gi ESM 765-100 800 FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND I rm AT 100 °C UNDER USERS CONDITION APPLICATIONS

Contextual Info: /T T SGS'THOMSON *J M . llD g[3 llLi TO@E!lD(gi ESM243-50 -* 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME (Metric thread ■ HIGH SURGE CURRENT CAPABILITY ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS DO 5

Contextual Info: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 30PI-200 -» 400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME Insulating voltage 2500 ■ VERY LOW SWITCHING LOSSES V rm s ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance 15pF

Contextual Info: / = T SGS-THOMSON ^ 7 M« Rffl[] g[^(Q [l[L[Igir[K]MD(gi L9930 DUAL FULL BRIDGE PRODUCT PREVIEW • m ■ ■ ■ 2Q INTERNAL CLAMPING VOLTAGE = 32V INTERNAL FREE WHEELING DIODES PARALLEL DRIVE CAPABILITY RESISTIVE OR INDUCTIVE LOAD R ds on = PROTECTION: ■ TEMPERATURE PROTECTION

Contextual Info: C T SGS-THOM SON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 11-600 h >1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS­ TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE RATINGS (limiting values)

Contextual Info: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 08P-200 ->400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING Cathode connected to case SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS

Contextual Info: rz7 SGS-THOMSON HJûïï[F»0 gi A 7# BAR 19 mmu SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. DO 35 (Glass ABSOLUTE RATINGS (limiting values) P a ra m e te r

BYT 13-800

Contextual Info: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 13-600 h >1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS­ TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE MAXIMUM RATINGS (limiting values)