GI FAR TECHNOLOGY Search Results

Gi Far Technology

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GFW160213-BNFAJP GIF SPECIFICATIONS T AR CUSTOMER : SAMPLE CODE : : DATE : Customer Sales Sign Sign 2008.08.04 N ECH

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GIF SPECIFICATIONS Customer Sign GT02-SERIAL 2008.08.27 ROHS N ECH T AR CUSTOMER : SAMPLE CODE : DRAWIG NO. : DATE

ya11

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GIF SPECIFICATIONS Customer Sign GT01-SERIAL 2008.08.25 ROHS N ECH T AR CUSTOMER : SAMPLE CODE : DRAWIG NO. : DATE

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2008 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

lcm1602

Abstract: LCM0802 lcm-1602 LCM2002 GFC2002B LCD 1X16 GFC1602M
Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. Quality Certified Environmentally Certified ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. Quality Certified Environmentally Certified ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC

Contextual Info: International I«R Rectifier PD -5.055A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 100 T S 6 0 U Ultra-Fast Speed IGBT Features V qes — 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

AN-905

Abstract: FR4 dielectric
Contextual Info: Designing with LVDS Chapter 4 4.0.0 DESIGNING WITH LVDS 4.1.0 PCB BOARD LAYOUT TIPS Now that we have explained how LVDS has super speed, and very low power, noise, and cost, many people might assume that switching to LVDS or any differential technology will solve all of their noise

MOSFET marking Z5

Abstract: AGQT ci 555 15Z DIODE agqs ci 567 datasheet AN-994 IRL1404Z IRL1404ZL IRL1404ZS
Contextual Info: PD - 94804A IRL1404Z IRL1404ZS IRL1404ZL AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l HEXFET Power MOSFET D VDSS = 40V

IRF 860

Abstract: 5056B IRF 150a
Contextual Info: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA75TS60U

Contextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: In te rn a tio n a l I«R Rectifier PD -5 .056A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V q e s — 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

RF71

Abstract: ior 050a
Contextual Info: PD - 9.1560A International IG R Rectifier IRF9953 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Surface Mount • Very Low Gate Charge and Switching Losses • Fully Avalanche Rated

jat52

Abstract: TA-TSY-000191 PM5319 PM5319-NI PMC-2030860
Contextual Info: us t, 20 04 09 :2 1: 24 PM ARROW 622 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5319 gi es , In c. on Tu ARROW 622 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data Sheet

PM5320-NI

Abstract: iso 3309 TA-TSY-000191 G-747
Contextual Info: us t, 20 04 09 :3 3: 07 PM ARROW 155 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5320 gi es , In c. on Tu ARROW 155 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data

PM8320-PI

Abstract: G751 PM8320 90ar2
Contextual Info: 04 AM High Density T1/E1 Framer With Integrated VT/TU & DS3/E3 Mappers and M13 MUX ASSP Telecom Standard Product Data Sheet Released nd ay ,0 9F eb ru TEMUX 84E3 ar y, 20 04 04 :3 4: PM8320 Data Sheet Released Issue No. 4: December, 2003 ed by da re en to

IRF7343 N

Abstract: RF710 IRF7343
Contextual Info: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

RF710

Abstract: irf7317
Contextual Info: PD - 9.1568B In terna tional IOR Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MO SFET un di g N-Ch P-Ch 20V -2 0 V ~m D1 1 m~-

PM5385

Abstract: smd l33 substitute D4D12 PM8610 34.368Mhz e2 e3 8448 bd234 NA-18
Contextual Info: 3: 16 AM ARROW 12xETEC ASSP Telecom Standard Product Data Sheet Preliminary ar y, 20 04 03 :1 PM5385 nd ay ,0 9F eb ru ARROW 12xETEC Data Sheet Preliminary Issue No. 3: January 2004 ed by da re en to u rk e yo fS ilic on ex pe rt Te ch no lo gi es Co .o n

FS1016

Abstract: bpra070 C.E.L.P 24 v MSP58C80 Z0810 FS-1016 celp coding celp coding 1995 233236
Contextual Info: CELP Coding - MCELP on the MSP58C80 Literature Number: BPRA070 Texas Instruments Europe December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the