phototransistor peak wave sensitivity 600 nm
Abstract: mm glass lens phototransistor glass lens phototransistor kpt801h
Text: Si Phototransistor KPT801HB KPT801HB H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens or visible-cut black epoxy lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator
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KPT801HB
phototransistor peak wave sensitivity 600 nm
mm glass lens phototransistor
glass lens phototransistor
kpt801h
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mm glass lens phototransistor
Abstract: No abstract text available
Text: Si Phototransister KPT811H 813H Features KPT811H ø4.7±0.1 4.5 Glass lens 6.6 max • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens 811H or flat glass window (813H) • Low leak current H6 Applications 20 • Optical switches
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KPT811H
KPT811H
KPT813H
mm glass lens phototransistor
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mm glass lens phototransistor
Abstract: phototransistor peak wave sensitivity 600 nm kpt801h
Text: Si Phototransistor KPT801H KPT801H H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors
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KPT801H
mm glass lens phototransistor
phototransistor peak wave sensitivity 600 nm
kpt801h
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phototransistor peak wave sensitivity 600 nm
Abstract: No abstract text available
Text: KPT811H Si Phototransister KPT811H • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current H6 ø4.65±0.1 4.5 Glass lens 6.6 max Features Applications 20±1 • Optical switches • Optical encoders • Photo-isolator
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KPT811H
phototransistor peak wave sensitivity 600 nm
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bar code reflective lens phototransistor
Abstract: DUAL IR REFLECTIVE SENSOR DUAL EMITTER BAR CODE HEAD bar code lens phototransistor high resolution reflective lens phototransistor high resolution reflective bar code lens sensor bar code reflective infrared phototransistor visible light bar code phototransistor VISIBLE LIGHT PHOTOTRANSISTOR
Text: DUAL EMITTER BAR CODE HEAD OTR 680/690 FEATURES: • Bar code reader / fine line sensor • 0.007” - 0.013” resolution • Compact size • Glass lens PRODUCT DESCRIPTION Opto Technology’s OTR 680/690 series combines two emitters, a lens and photodetector into one low
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940nm
660nm
bar code reflective lens phototransistor
DUAL IR REFLECTIVE SENSOR
DUAL EMITTER BAR CODE HEAD
bar code lens phototransistor
high resolution reflective lens phototransistor
high resolution reflective bar code lens sensor
bar code reflective infrared
phototransistor visible light
bar code phototransistor
VISIBLE LIGHT PHOTOTRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input
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PNZ106
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PN107
Abstract: PN108 PNZ0108 PNZ107 PNZ108
Text: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)
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PNZ107,
PNZ108
PN107,
PN108)
PNZ107
PNZ0108)
30nductor
PN107
PN108
PNZ0108
PNZ107
PNZ108
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PNZ0106
Abstract: No abstract text available
Text: Phototransistors PNZ0106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input
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PNZ0106
PNZ0106
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PNZ0107
Abstract: PNZ0108
Text: Phototransistors PNZ0107, PNZ0108 Silicon NPN Phototransistors PNZ0107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min.
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PNZ0107,
PNZ0108
PNZ0107
PNZ0108)
PNZ0107
PNZ0108
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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BPX38
Abstract: BPX43 bpx38 application
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
BPX38
bpx38 application
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNA1401L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.
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PNA1401L
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BPW77NA
Abstract: BPW77NB BPW77N
Text: BPW77N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 °
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BPW77N
BPW77N
D-74025
29-Mar-04
BPW77NA
BPW77NB
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BPW77NB
Abstract: No abstract text available
Text: BPW77N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 °
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BPW77N
BPW77N
D-74025
02-Jun-04
BPW77NB
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bpx38
Abstract: No abstract text available
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
08-Apr-05
bpx38
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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bpx38 application
Abstract: BPX38 BPX43
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
bpx38 application
BPX38
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Light dark detector alarm by ic 555
Abstract: ic 555 use with metal detector BPX43 ma 8127 BPX43-4
Text: BPX 43 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs.
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BPX43
D-74025
Light dark detector alarm by ic 555
ic 555 use with metal detector
ma 8127
BPX43-4
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phototransistor visible light
Abstract: PNZ109L
Text: Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109L
2856K
phototransistor visible light
PNZ109L
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BPW77N
Abstract: BPW77NA BPW77NB MA694 8349
Text: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes
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BPW77N
BPW77N
D-74025
20-May-99
BPW77NA
BPW77NB
MA694
8349
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bpx38 application
Abstract: BPX38 BPX43 BPX38-5
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
bpx38 application
BPX38
BPX38-5
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PN106
Abstract: PNZ106 npn phototransistor
Text: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input
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PNZ106
PN106)
PN106
PNZ106
npn phototransistor
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GS-2020
Abstract: TIL403
Text: ma SILICON PHOTOTRANSISTOR “GLASS-STICK” 61054 TYPE GS 2020 OPTOELECTRONIC PRODUCTS DIVISION GENERAL DESCRIPTION GLASS HERMETIC PACKAGE DOME LENS Mii 61054 is an N-P-N Silicon Phototransistor in a small diameter hard glass package. The dome-shaped lens is
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MIL-S-19500
GS-2020
TIL403
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2020-3
Abstract: TIL406 2020-8
Text: niCROPAC INDUSTRIES INC « E t • tiiatmj D O O B Ä U a ■ HPI SILICON PHOTOTRANSISTOR “GLASS-STICK” 61054 TYPE GS 2020 OPTOELECTRONIC PRODUCTS DIVISION«* ' - GENERAL DESCRIPTION GLASS HERMETIC PACKAGE DOME LENS Mii 61054 is an N-P-N Silicon Phototransistor in a small diameter hard glass package. The dome-shaped lens is
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MIL-S-19500
2020-3
TIL406
2020-8
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