GOLD EMBRITTLEMENT Search Results
GOLD EMBRITTLEMENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SZZA031
Abstract: Cu OSP and Cu SOP gold embrittlement palladium DIAMOND TECHNOLOGIES IPC-A-610C gold embrittlement sn-pb-ag solder paste
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SZZA031 Cu OSP and Cu SOP gold embrittlement palladium DIAMOND TECHNOLOGIES IPC-A-610C gold embrittlement sn-pb-ag solder paste | |
7209-1511-015
Abstract: 7002-1541-010 7441-1521-0XX 348 pins plug connector 6-40 UNF 2 B TORQUE 7105-1561-010 7009-1511-000 RG196 RG316 sma sma straight pcb mount
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127-7pdf MIL-PRF-39012 7209-1511-015 7002-1541-010 7441-1521-0XX 348 pins plug connector 6-40 UNF 2 B TORQUE 7105-1561-010 7009-1511-000 RG196 RG316 sma sma straight pcb mount | |
Contextual Info: O N L I N E C ATA L O G Microminiature Coaxial Connectors SSMB SSLB SSMC APPLIED ENGINEERING PRODUCTS 104 John W. Murphy Drive • P.O. Box 510 • New Haven, CT 06513 203 776-2813 • FAX (203) 776-8294 www.aepconnectors.com • e-mail: aepsales@aepconnectors.com |
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MIL-PRF-39012 | |
gold embrittlement
Abstract: ADXL278 application note ADXL278 ADXL78 AN-652 cte table LCC-8 LCC-8 land pattern ADXL193 IPC-SM-782
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AN-652 ADXL78/ADXL278/ADXL193 E03707 gold embrittlement ADXL278 application note ADXL278 ADXL78 AN-652 cte table LCC-8 LCC-8 land pattern ADXL193 IPC-SM-782 | |
"tunnel diode" chip assembly
Abstract: "tunnel diode" wire bonding Ablestik gold embrittlement DATASHEET TUNNEL DIODE germanium diode Metelics Tunnel Diode
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603-641-SEMI "tunnel diode" chip assembly "tunnel diode" wire bonding Ablestik gold embrittlement DATASHEET TUNNEL DIODE germanium diode Metelics Tunnel Diode | |
2 to 3 GHz bandpass filter wide band
Abstract: cavity resonator 1.5 GHz Bandpass Filters Shielded Microstrip Line
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transistor working principle
Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
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AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron | |
AN3025
Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
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AN3025 AN3025 transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free | |
Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY, Michael ASIS, Jose SALTA Doc. Nr. Date: 2008/02/14 General solder mounting recommendations |
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gold embrittlement
Abstract: shim CR-15 M567
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CR-15 00ofiles. gold embrittlement shim M567 | |
shim
Abstract: CR-15 gold embrittlement
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CR-15 shim gold embrittlement | |
NICHROME wire 0.005 mm2
Abstract: gold embrittlement MSI nichrome resistor nicr-ni temperature waveguide selective switch microwave circulators AT*T Wireless Services coupler
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27-Mar-07 NICHROME wire 0.005 mm2 gold embrittlement MSI nichrome resistor nicr-ni temperature waveguide selective switch microwave circulators AT*T Wireless Services coupler | |
tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
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waveguide selective switch
Abstract: quartz optical properties MSI nichrome resistor A1203 Thin Film Capacitors AI and Au wirebonding NICHROME wire 0.005 mm2 microwave circulators AT*T Wireless Services coupler AT*T coupler conductor
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02-Dec-04 waveguide selective switch quartz optical properties MSI nichrome resistor A1203 Thin Film Capacitors AI and Au wirebonding NICHROME wire 0.005 mm2 microwave circulators AT*T Wireless Services coupler AT*T coupler conductor | |
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00709
Abstract: MA4SW210 MADR-007097-000100 MA4SW110 MADR-009190-000
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MA4SW110 MA4SW210 MA4SW310 30dBm MA4SW110 MA4SW110, 00709 MADR-007097-000100 MADR-009190-000 | |
MADR-007097-000100
Abstract: MADR-009190-000100
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MA4SW510 30dBm MA4SW510 MADR-007097-000100 MADR-009190-000100 | |
Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs |
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MA4SW410 30dBm MA4SW410 | |
Three bond
Abstract: MADR-009190-000 MA4SW410
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MA4SW410 30dBm MA4SW410 Three bond MADR-009190-000 | |
trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
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OCR Scan |
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SI00-06
Abstract: SN62 PB36 ag2 SN62 PB36 ag2 Copper design ideas with or without underfill MO-211 SFC05-4 thermal cycling reliability SN62 PB36 ag2 gold smd ag2
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SI00-06 MO-211. SI00-06 SN62 PB36 ag2 SN62 PB36 ag2 Copper design ideas with or without underfill MO-211 SFC05-4 thermal cycling reliability SN62 PB36 ag2 gold smd ag2 | |
AG04Contextual Info: SI00-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS Semtech utilizes a proprietary electroless nickel plate process for the UBM paired with screen printed solder balls. The balls are laid out in a grid with a pin out pattern per JEDEC standard outline MO-211. |
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SI00-06 MO-211. AG04 | |
sirenza LNA
Abstract: C0603C100J5GAC C0603C103K5RAC C0603C221J5GAC SLX-2143 x10015
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SLX-2143 SLX-2143 EDS-102501 sirenza LNA C0603C100J5GAC C0603C103K5RAC C0603C221J5GAC x10015 | |
C0603C100J5GAC
Abstract: C0603C103K5RAC C0603C221J5GAC SLX-2043
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SLX-2043 SLX-2043 EDS-102235 C0603C100J5GAC C0603C103K5RAC C0603C221J5GAC | |
Contextual Info: OBSOLETE Product Description SLX-2143 The Sirenza Microdevices’ SLX-2143 is a low noise amplifier module operating in the 1700 - 2200 MHz frequency band. This device has been optimized to serve high linearity base station applications where a high intercept point is |
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SLX-2143 SLX-2143 EDS-102501 |