GP 250 DIODE Search Results

BZY97C

Abstract: bzy200 BZY10 BZY180 BZY120 BZY150 ZENER bzy18 BZY56 bzy100 bzy39
Contextual Info: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.

ZENER bzy18

Abstract: bzy15 bzy200
Contextual Info: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.

BZY97C

Abstract: ZENER bzy18 ZENER bzy97c bzy15 bzy12 BZY33 BZY150 bzy200 BZY120 BZY82
Contextual Info: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes DO-41 Plastic Voltage 10 to 220 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. Power 1.5 W +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

BZY12

Abstract: BZY120 bzy200
Contextual Info: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low leakage current

BZY82

Abstract: Fagor GP BZY33 BZY120 BZY150 BZY56 BZY97C12 BZY97C22 bzy27 BZY22
Contextual Info: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction • Low leakage current

HSMS-2850-BLK

Abstract: HSMS-2802-BLK MSA-1105 HSMS-2822-TR1 IAM-81008-STR HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850
Contextual Info: A g i l e n t Technologies Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers Diodes continued Please reference artwork on previous page. Surface Mount RF Schottky Barrier Diodes Mfr.Õs Type Bulk Tape and Reel 5082-2800 HSMS-2800-BLK

GP 015 DIODE

Abstract: M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current

diode gp 805

Abstract: gp 835 zener 6352
Contextual Info: ZY6V2GP.ZY200GP 2 W Glass Passivated Zener Diode DO-15 Plastic Power 2.0 W Voltage 6.2 to 200 V. ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

M63814FP

Abstract: M63814GP M63814KP M63814P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current

diode gp 1.22

Contextual Info: ZY6V2GP.ZY200GP 2 W Glass Passivated Zener Diode DO-15 Plastic Power 2.0 W Voltage 6.2 to 200 V. ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

GP 015 DIODE

Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

M63814FP

Abstract: M63814GP M63814KP M63814P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

M63812KP

Abstract: M63812P M63812FP M63812GP M63812 KP300
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. HVGP-1000-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 HIGH VOLTAGE DIODE RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE R PROPRIETARY SOFT GLASS JUNCTION

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

zy 406 transistor

Abstract: GP 005 DIODE zy 406 16P2N M63813FP M63813GP M63813KP M63813P 16P2Z-A
Contextual Info: 三菱半導体〈トランジスタアレイ〉 M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE 概 要 M63813P/FP/GP/KPはNPNトランジスタで構成された7 回路のクランプダイオード付きのトランジスタアレイであり、

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

Contextual Info: Fast recovery glass passivated rectifier diodes. 2.5 Amps, to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Forward Forward Rectified Reverse Peak Forward Surge TYPE Current Current Voltage Current Ifrm

QFN20

Abstract: T7024 T7024-PGP T7024-TRQ T7024-TRS PU-118
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

history of bluetooth

Abstract: RF LNA 3.1 to 10.6 GHz 27 Mhz power amplifier class d power amplifier lna 15 dbm gain atmel 912 diagram sony lcd tv HIGH POWER ANTENNA SWITCH PIN DIODE POWER AMPLIFIER CIRCUIT DIAGRAM 10000 T7024-TRSY
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

FRI03G

Abstract: FR101G FR102G FR104G FR105G FR107G FR107G-STR
Contextual Info: Fast recovery glass passivated rectifier diodes. 1 Amp. to 2 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Forward Peak Forward Surge Forward Rectified Reverse TYPE Current Current Current Voltage If s m