GPX05956 Search Results

Contextual Info: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

SMD MARKING CODE A12

Contextual Info: HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM 1M x 16-MBit Synchronous DRAM for High-Speed Graphics Applications • High Performance: • Full page optional for sequential wrap around -5.5 -6 -7 Unit fCKMAX @ CL = 3 183 166 143 MHz tCK3 5.5 6 7 ns

smd marking m11

Abstract: M6 SMD MARKING CODE
Contextual Info: 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 Units 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns fCK MAX. • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command

Contextual Info: HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command

39S16800AT-8

Abstract: 39S16800AT-10
Contextual Info: SIEMENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information High Performance: -8 -10 Units /CK 125 100 MHz Automatic and Controlled Precharge Command CO Multiple Burst Read with Single Write Operation o • 8 10 ns

Contextual Info: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command

39S16800AT-8

Abstract: smd marking m11 Q67100-Q1323 Q67100-Q1333 Q67100-Q1335 39S16800T 39S16800AT-10 smd marking code M11 smd code m6
Contextual Info: 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 • Multiple Burst Read with Single Write Operation -8 -10 Units fCK 125 100 MHz • Automatic and Controlled Precharge Command