GRAS 40 PF Search Results

varistance

Abstract: Wurth varistor surge 1206 cms 1206 cms diode 825 50 060 1210-17 825-42-250 S-108 smd 2 A Wurth varistor surge 0603
Contextual Info: SMD Power Varistors Features Technologie Les varistances sont des composants de protection destinées à protéger les systèmes électroniques contre les surtensions et les transitoires énergétiques.Elles doivent posseder des caractéristiques intrinsèques propres à écrêter rapidement la

DB101

Abstract: DB102 DB103 DB104 DB105 DB106 DB107
Contextual Info: DB101 thru DB107 GLASS PASSIVATED REVERSE VOLTAGE - 50 to 1000 Volts BRIDEG RECTIFIERS FORWARD CURRENT - 1.0 Amperes DB FEATURES ●Rating to 1000V PRV .335 8.5 .307(7.8) ●Ideal for printed circuit board - ●Low forward voltage drop,high current capability

DB101S

Abstract: DB102S DB103S DB104S DB105S DB106S DB107S
Contextual Info: DB101S thru DB107S GLASS PASSIVATED REVERSE VOLTAGE - 50 to 1000Volts BRIDEG RECTIFIERS FORWARD CURRENT - 1.0 Amperes DBS FEATURES ●Rating to 1000V PRV .047 1.2 .037(0.95) ●Ideal for printed circuit board .335(8.5) .307(7.8) ●Low forward voltage drop,high current capability

DB207S

Abstract: DB201S DB202S DB203S DB204S DB205S
Contextual Info: DB201S thru DB207S SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDEG RECTIFIERS DBS FEATURES ●Rating to 1000V PRV .047 1.2 .037(0.95) ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

DB207

Abstract: DB201 DB202 DB203 DB204 DB-207
Contextual Info: DB201 thru DB207 SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDEG RECTIFIERS DB FEATURES .335 8.5 .307(7.8) ●Rating to 1000V PRV - ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

DF15005

Abstract: DF1510
Contextual Info: DF15005 thru DF1510 SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDEG RECTIFIERS DF FEATURES .335 8.5 .307(7.8) ●Rating to 1000V PRV ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

201S

Abstract: 202S 204S 208S DF2005S DF210S
Contextual Info: DF2005S thru DF210S SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDEG RECTIFIERS DFS FEATURES ●Rating to 1000V PRV .047 1.2 .037(0.95) ●Ideal for printed circuit board .335(8.5) .307(7.8) ●Low forward voltage drop,high current capability

DB151

Abstract: DB152 DB153 DB154 DB155 DB156 DB157
Contextual Info: DB151 thru DB157 SURFACE MOUNT GLASS PASSIVATED BRIDEG RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes . DB FEATURES .335 8.5 .307(7.8) ●Rating to 1000V PRV - ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

DF2005

Abstract: DF210
Contextual Info: DF2005 thru DF210 SURFACE MOUNT GLASS PASSIVATED BRIDEG RECTIFIERS REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 2.0 Amperes . DF FEATURES .335 8.5 .307(7.8) ●Rating to 1000V PRV ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

DB151S

Abstract: DB152S DB153S DB154S DB155S DB156S DB157S
Contextual Info: DB151S thru DB157S SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDEG RECTIFIERS DBS FEATURES .047 1.2 .037(0.95) ●Rating to 1000V PRV ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

DF005

Abstract: DF01 DF02 DF04 DF06 DF08 DF10
Contextual Info: DF005 thru DF10 REVERSE VOLTAGE - 50 to 1000Volts GLASS PASSIVATED BRIDEG RECTIFIERS FORWARD CURRENT - 1.0 Amperes DF FEATURES ●Rating to 1000V PRV .335 8.5 .307(7.8) ●Ideal for printed circuit board ●Low forward voltage drop,high current capability

Contextual Info: 0304 Einbaukupplung nach IEC 60130-9, IP 68, mit Schraubverschluss und Lötanschlüssen, für Frontmontage 1. Temperaturbereich -40 °C/+85 °C 2. Werkstoffe Kontaktträger Kontaktbuchse 3- bis 8-polig Kontaktbuchse 12-polig Gehäuse PA GF CuZn, untersilbert und vergoldet

Contextual Info: KGV Einbaukupplung nach IEC 60130-9, IP 40, mit Schraubverschluss und Lötanschlüssen, für Rückseitenmontage 1. Temperaturbereich -40 °C/+85 °C 2. Werkstoffe Kontaktträger Kontaktbuchse 3- bis 8-polig Kontaktbuchse 12-polig Gehäuse PA GF CuZn, untersilbert und vergoldet

PF0314

Contextual Info: 0314 Einbaustecker nach IEC 60130-9, IP 68, mit Schraubverschluss und Lötanschlüssen, für Frontmontage 1. Temperaturbereich -40 °C/+85 °C 2. Werkstoffe Kontaktträger Kontaktstift 3- bis 8-polig Kontaktstift 12-polig Gehäuse Ringmutter Dichtung PA GF

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: 0322 Kupplung nach IEC 60130-9, IP 68, mit Schraubverschluss und Lötanschlüssen, 360° geschirmt 1. Temperaturbereich -40 °C/+85 °C 2. Werkstoffe Kontaktträger Kontaktbuchse 3- bis 8-polig Kontaktbuchse 12-polig Gehäuse Rändelmutter Dichtung PA GF CuZn, untersilbert und vergoldet

IRFP440

Contextual Info: PD-9.457C International S«r Rectifier IRFP440 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS

SCR 1989

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D ^53=131 QD2DS1D 2 • B U K 455-500A B U K 455-500B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

VT100

Abstract: fonctionnement d horloge clavier 12 touches
Contextual Info: VT 100 Indicateur de pesage Manuel d’utilisation VT 100 – Notice Utilisation - Revision A1, Octobre 2004 1 Contenu CHAPITRE 1 INTRODUCTION 1.1 Modes de fonctionnement. 6 1.2 Prise en main de l’indicateur . 7

k427 transistor

Contextual Info: N ANER PHILIPS/DISCRETE ^ 5 3 7 3 1 0050260 0 2SE D PowerMOS transistor B U K 4 2 7-60 0 A B U K 427-600B G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

Contextual Info: 2 M B I1 O O F -0 6 0 « ± ^ • 7- ^ - » 1 0 0 A IGBT =Ei>^-)V : Outline Drawings IGBT MODULE 2 3 .D 2-05,4 Features • fStSfaWHE • 10.O | 2 3 .0 10.0 | 10.0 Low Saturation Voltage ( M O S * - h « il) • Voltage Drive Variety of Power Capacity Series

65C816

Abstract: serial port 8251 8251 serial port SERIAL CONTROLLER 8251 8251 timer 8251 DMA controller B13D2 Applications of 8251 gmpx SRAM 6114
Contextual Info: Ordering number: EN & 5042 CMOS LSI LC8214 Facsimile Controller Prelim inary Overview Package Dimensions The LC8214 is a facsimile controller comprising a CPU, CPU peripheral circuits, image processor, dot change detector for image data compression and expansion, ther­

MSM5117800

Abstract: TSOP28-P-400
Contextual Info: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

0127B

Contextual Info: Lattice ispLSI and pLSI 2128 Semiconductor • ■■■■■ C orporation • High Density Programmable Logic ■ ml f f W Wm Features F u n ctio n a l B lo ck D iagram a > HIGH DENSITY PROGRAMMABLE LOGIC n m m u m u Efua m m Output Routing Pool ORP | ) Output Routing Pool (ORP)