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    gp 722

    Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout


    Original     		PDF AN-VHF-036-A RD00HVS1 150-162MHz RD00HVS1: 150MHz 156MHz 162MHz c72JB CR1/10-241JB gp 722 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E

    GRM2162C

    Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V


    Original     		PDF AN-UHF-076-A RD00HVS1 450-470MHz RD00HVS1: 450MHz 460MHz 470MHz C1H100FD01E GRM2162C1H680GD01E GRM2162C GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E 30t60