GRM36X Search Results

ceramic capacitor

Abstract: 10uF CAPACITOR 0402 grm36x7r103k016 capacitor 0402 GRM39X7R102K050 GRM36C0G101J050 murata resistor resistor 0402 GRM36C0G180J50 c265
Contextual Info: EV KIT BILL OF MATERIALS IF=190MHZ DESIGNATION QTY DESCRIPTION C1, C6, C18, Z1, C19 5 100pF 5% ceramic capacitor (0402) Murata GRM36C0G101J050 C4, C22 2 0.068µF 10% ceramic capacitor (0402) Murata GRM36X7R682K25 C8 1 82pF 5% ceramic capacitor (0402) Murata GRM36C0G820J050

Variable resistor 10K ohm

Abstract: 10K variable resistor GRM36COG080J050A 10K ohm Variable resistor resistor 0402 of variable resistor 10k ohm R31-R34 Capacitor ceramic 0402 murata resistor GRM36X7R102K050A
Contextual Info: MAX2312 EV KIT BILL OF MATERIAL Date:5/1/00 BOM REV:E BOARD REV:C MODIFIED for 190MHz IF * Maxim will supply component QTY 14 DESCRIPTION 0.01uF 10v Min, 10% Ceramic Capacitor 0402 MURATA GRM36X7R103K016A E# EC 7 * C6, C7 2 18 * C15, C26, C32, C36, C39, C40, R6, R10

RCI-0402-10R0J

Abstract: RAYTHEON RMBA09500-58 grm39 GRM36COG8R2B50 OIP35 grm36cog101j50
Contextual Info: RF Components RMBA09500-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

3296 Variable Resistor terminals BOURNS

Abstract: GRM42-6COG* murata GRM36COG560J50 GRM36COG101J50 GRM36COG100D50 GRM36COG010C50 617PT1026 murata frequency mixer gsm GRM42-6Y5V105 GRM42-6COG
Contextual Info: TRF1020 GSM RECEIVER SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998 D D D D D Operates from 2.75 V to 3.5 V Supply Low Current Consumption Low Profile Package: 48-pin Plastic Quad Flat Package PQFP Global System for Mobile Communications (GSM), Class 3, 4, or 5 Mobile Station (MS)

ITT2305AK

Contextual Info: 3.0V 100mW RF Power Amplifier IC for Bluetooth ITT2305AK PRELIMINARY FEATURES • • • • • • • • 20 dB Gain – dramatically increases range of your low power bluetooth devices Single 3.0V positive supply – operates over a wide range of supply voltages

RAYTHEON

Abstract: RMBA09500-58
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

AWT1921S11

Abstract: AWT921 SSOP-28
Contextual Info: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10% Low Cost

abstract for wireless communication system

Abstract: 48vdc schematic diagram HP8481A block diagram for RF RECEIVER GSM PIC wireless speaker schematic
Contextual Info: Evaluation Board Documentation TRF8010 RF Transmit Driver 4.8 Volt GSM Application APPLICATION BRIEF: SWRA010 Wireless Communications Business Unit Digital Signal Processing Solutions 21 November 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

AN1273

Abstract: BSS138-7 lg smd transistor smd 4-pin DUAL DIODE smd schottky diode s4 5015 testpoint keystone 4.7uF 110V X7R YAGEO RC0402FR ISL6269AEVAL2Z ISL6269A
Contextual Info: ISL6269AEVAL2Z User Guide For ISL6269A and ISL6269B PWM Controllers Application Note Introduction The ISL6269AEVAL2Z evaluation board demonstrates the performance of the ISL6269A or ISL6269B single-phase synchronous-buck PWM controller featuring Intersil's Robust

GSM/GSM module circuit diagram

Abstract: GRM36COG470J50 Murata switchplexer DCS1800 GSM900 MMM5063 PCS1900
Contextual Info: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Advance Information MMM5063/D Rev. 0.2, 09/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.

48vdc schematic diagram

Abstract: SWRA008 HP8481A wireless speaker schematic abstract for wireless communication system TSC6000 TRF8011
Contextual Info: Evaluation Board Documentation TRF8011 RF Transmit Driver 4.8 Volt GSM Application APPLICATION BRIEF: SWRA008 Wireless Communications Business Unit Digital Signal Processing Solutions October 97 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

Contextual Info: Application Note 1932 ISL28023 Precision Digital Power Monitor Evaluation Kit User Guide Introduction ISL28023 Generic Board ISL28023EVAL1Z The Precision Digital Power Monitor (DPM) Evaluation Kit is a three evaluation board design that demonstrates the

GRM155F51C104ZA01B

Abstract: GRM155R71C223KA01B GRM36X7R102K50 M513 MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000
Contextual Info: RoHS Compliant DECT Power Amplifier 1880 - 1930 MHz MAAPSS0076 V1 Features Functional Schematic • Ideal for DECT Applications • Power Set Pin for Adjustable Output Power High Power Mode: 25.5 dBm Low Power Mode: 17 dBm • Power Gain: 25 dB Typical • Voltage Supply Compensation

cdma Booster schematic

Abstract: GRM36cog270J50 GRM36cog330j50 AWT1921 AWT1921S11 SSOP-28 ATC100A4R7CW150X
Contextual Info: AWT1921S11 A Integrated High Power Amp 1610 MHz Advanced Product information Rev 4 DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. The device has been specifically designed for fixed satellite access

MURATA GSM FILTER

Contextual Info: Advance Information MMM5063/D Rev. 0.1, 07/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/

Contextual Info: RMPA0913C 3.5V AMPS/CDMA Power Amplifier General Description Features The RMPA0913C is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip matching

12 volts 50 watt amplifier schematic diagram

Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
Contextual Info: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver

12v to 20v cuk converter

Abstract: GRM40X7R105M16 JMK212BJ475MG JMK325BJ226MM LT1611 LT1931 LX1734 LX1734CLM LX1734CLM-TR MO-229
Contextual Info: LX1734 TM 1.0MHz Inverting DC/DC Converter KEY FEATURES DESCRIPTION Fixed frequency operation ensures a clean output free from low frequency noise typically present with charge pump solutions. The low impedance output remains within 1% of nominal during

1895 ic

Abstract: schematics for a PA amplifier class d neohm resistor DCS1800 GSM900 MMM5062 PCS1900 MURATA GSM FILTER Murata switchplexer b 332 k
Contextual Info: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Technical Data MMM5062/D Rev. 3.2, 09/2003 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.

wireless speaker schematic

Abstract: HP8481A RCI-0603 48vdc schematic diagram switching circulator TRF8011 C470 TMS320C54X HP8656B SYNTHESIZER KEYBOARD schematic
Contextual Info: Evaluation Board Documentation TRF8011 RF Transmit Driver 4.8 Volt GSM Application APPLICATION BRIEF: SWRA008 Wireless Communications Business Unit Digital Signal Processing Solutions October 97 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

DCS1800

Abstract: GSM900 MMM5062 PCS1900
Contextual Info: Freescale Semiconductor, Inc. Technical Data MMM5062/D Rev. 3.2, 09/2003 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device

Taiyo 93-7

Contextual Info: 19-1736; Rev 0; 7/00 Triple/Dual-Mode CDMA LNA/Mixers _Features The MAX2323/MAX2325 are low-noise amplifier LNA plus mixer ICs optimized for code-division multiple-access (CDMA) applications in both cellular and PCS bands. The

100A5R1BW150X

Abstract: LQG11A12NJ00 LQG11A39NJ00 LQG11A3N9S00 LQG11A5N6S00 LQG11AR10J00
Contextual Info: 19-1524; Rev 2; 11/99 MAX2264/MAX2265/MAX2266 Evaluation Kits Each kit is assembled with either the MAX2264, MAX2265 or MAX2266 and incorporates input and output matching components optimized for the 824MHz to 849MHz RF frequency band. These EV kits are capable of operating at

capacitor 22uf 10v 0402

Abstract: resistor 0402 J500-ND GRM36X7R102050 0805CS-151XJBC Capacitor tantalum 0402 capacitor 2.2uf 10v 0402 GRM36COG101J050 LL1608-FS3N9J 44qfn
Contextual Info: -1BILL OF MATERIALS: MAX2338 EV KIT BILL OF MATERIAL BOM REV: F BOARD REV: A LNA’s TUNED TO GSM AND DCS BAND MIXER’s TUNED TO 270MHz AND 148MHz IF Underlined components are on the backside DESIGNATION C1, C4, C9 QTY 3 C2, C3, C13, C21, C24, 6 C27 C5, C14, C16