GS ICTE 15 Search Results

33N10E

Abstract: TP33N10E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTP33N10E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

4614 mosfet

Abstract: MOTOROLA 3055V 3055VL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This

20N50ES

Abstract: MTW20N
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TM OS POW ER FET 20 AMPERES 500 VOLTS RDS on} = 0-24 OHM IM-Channel Enhancement-Mode Silicon Gate

75N03HDL

Abstract: 75N03 75n03h 4456 mosfet mosfet 4456
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information HDTM O S E -F E T High D ensity P o w er FET D2PAK fo r S u rfa c e M ount M T B 75N 03H D L M otorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M T D 3N 25E TM O S E-FET™ P ow er Field E ffe c t T ran sisto r DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FE T

D15N06V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This

16N25E

Abstract: gsp5000 20F40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

FRO 24N

Abstract: 24n40e 24n40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M TW 24N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet TM O S E -FE T P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 0H M S T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n

14N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW14N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 with Isolated Mounting Hole M o to ro la P re fe rre d D e v ic e TM O S PO W ER FET 14 A M P E R E S 5 0 0 VO LTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information M TD F 1N 02H D Medium Power Surface Mount Products TM O S Dual N -C h an n e l F ield E ffe c t Tran sisto r M o to ro la P re fe rre d D e vice SINGLE TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS R D S on = 0.120 OHM

1N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D a ta S heet M T D 1N 50E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r DPAK for S u rfa c e M ount N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C01 HD Medium Power Surface Mount Products Motorola Preferred D evice C o m p le m e n ta ry TM O S Field E ffe c t Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS M iniM O S™ d e vice s are a n a d va n ce d s e rie s o f p o w e r M O S F E Ts

P1N60E

Abstract: 1n60e
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet M T P 1N 60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M o t o r o la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s an a d v a n c e d te r m in a tio n

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD5P06V TMOS V ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TM O S PO W ER FET P-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFE Ts. This

20N03

Abstract: 20n03h
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM

TY25N60E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY25N60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This a d va n ce d T M O S p o w e r F E T is d e sig n e d to w ith sta n d high

TP10N10E

Abstract: transistor Ip
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high

2n50e

Abstract: transistor 2N50E 4-490 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD2N50E TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te r m in a tio n

DIODE F2C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M M D F2C 03H D Medium Power Surface Mount Products Motorola Preferred Device Complementary TMOS Field Effect Transistors M in iM O S '" d evice s are an a d va n ce d s e rie s o f p o w e r M O S F E Ts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM O S V is a new le ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is lan ce area product a bo u t o n e -h a lf th a t of sta n d ard M O SFETs. T h is

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP6P20E TM O S E-FET™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device P-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d h ig h

motorola s3p02

Abstract: S3P02 LA 4224
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t Medium Power Surface Mount Products TM O S S ingle P -C h ann el Field E ffe c t Tran sisto rs SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS M in iM O S "' d e vice s are an a d va n ce d se rie s of p o w e r M O S FE Ts

20N20E

Abstract: B20N20E motorola 20n mosfet 20n
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s Data Sheet MTB20N20E TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M otorola Preferred Device TM O S POW ER FET N-Channel Enhancement-Mode Silicon Gate V The D ^P A K p a cka g e has th e c a p a b ility of h ou sin g a larg e r die