GS LOGO, MARKING 30A Search Results

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFR3518

Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518
Contextual Info: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFR3518

Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518 IRFR3518PBF
Contextual Info: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

EK 110

Abstract: 12v 30A regulator smps isolated 12v output AN-994 EIA-541 IRFR120 IRFR3704 IRFU120 IRFU3704 U120
Contextual Info: PD - 95034A IRFR3704PbF IRFU3704PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET Power MOSFET VDSS RDS on max ID 20V 9.5mΩ 75A High Frequency Buck Converters for

marking code TR 355A

Abstract: AN-994 EIA-541 IRFR120 IRFR3704 IRFU120 IRFU3704 U120 power MOSFET IRF data 4.5v to 100v input regulator
Contextual Info: PD - 95034A IRFR3704PbF IRFU3704PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET Power MOSFET VDSS RDS on max ID 20V 9.5mΩ 75A High Frequency Buck Converters for

Contextual Info: PD - 95510 IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

30CTQ

Abstract: 30CTQ100G-1 30CTQ100GS 30CTQ80GS 40HF P460 SMD-220
Contextual Info: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

STW30N20

Abstract: W30N20
Contextual Info: STP30N20 STW30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W STW30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested

Contextual Info: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)

Contextual Info: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 60V 21m 30A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)

AP9976GP

Contextual Info: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 60V RDS ON 21mΩ ID G 30A S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: Bulletin PD-20835 rev. A 02/07 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

20835

Contextual Info: Preliminary Data Sheet PD-20835 09/04 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

Contextual Info: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

92T03GH

Abstract: 92t03 AP92T03GH 92T0 marking codes transistors SSs AP92T03GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: AP92T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristics BVDSS 30V RDS ON 4mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with

9468GH

Abstract: ap9468 AP9468GH GS Logo, Marking 30A marking codes transistors SSs AP9468GJ 9468 GS Logo Marking 30A Logo GS marking 30A
Contextual Info: AP9468GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 40V RDS ON 7mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the

Mosfet 40P03GH

Abstract: 40P03G
Contextual Info: AP40P03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -30V RDS ON 28mΩ ID G ▼ RoHS Compliant BVDSS -30A S Description

40p03gj

Abstract: 40p03gh
Contextual Info: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D BVDSS -30V RDS ON Simple Drive Requirement Fast Switching Characteristic 28m ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial

AN-994

Abstract: IRLZ34N IRLZ34NL IRLZ34NS
Contextual Info: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET

Contextual Info: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary

Mosfet 40P03GH

Abstract: 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03
Contextual Info: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial