GSDS50020 Search Results

Contextual Info: D at a S h e e t No. G S D S 5 0 0 1 8 & G SD S 5 0 0 2 0 C=L SEMICONDUCTORS Type GSDS50018 & G e n e ric P a rt N u m b e r: GSDS50020 G S D S 50018 & G SD S50020 High Power NPN Transistors 180 V & 200 V, 50 Amp Switching TO-3 T0-2004AE Case Features: Applications:

vceo 25 icm 1 rj-c

Abstract: GSDS50018 GSDS50020
Contextual Info: Data Sheet No. GSDS50018 & GSDS50020 Generic Part Number: Type GSDS50018 & GSDS50020 GSDS50018 & GSDS50020 High Power NPN Transistors 180 V & 200 V, 50 Amp Switching TO-3 TO-2004AE Case Features: Applications: • • • • • • • • • • •

2N6655

Abstract: 2N6654 26X16
Contextual Info: General Semiconductor Industries, Inc. ¥ NPN TRANSISTOR CHIP " 21 " Typical Device Types: 2N6653, 2N6654, 2N6655, GSDS50020 20 - 50 AMP Fast Switching Bonding Pad Areas Base 3 3 4 x 1 6 m ils Emitter (4) 26 X 16 m ils Front Metallization: Aluminum • C 2R For

t03 package transistor pin configuration

Abstract: 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I
Contextual Info: SÛUARE » CO/ GENERAL -A f hD D • fiSEISSÜfl 0001057 60C 01857 GENERAL SEMICONDUCTOR INDUSTRIES, INC. 1 1 I b ■ D N PN Isolated Collector TO-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The isolated collector package configuration has been designed for use In switching applications

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

N25U

Abstract: 7b92a AMs03 BM-7A GDGE173 GSDS50018 GSDS50020 QQG2174 TWX910-950-1942
Contextual Info: í SÛUARE D CO/ D GE NE RA L 3918590 G EN ERAL ^ • □005175 95 D SEM IC O N D U C TO R General Sem iœ nductor Industries,Inc. ^ ÛSE550Ô 1 0 U B H E T Ì COMPANY 1 02172 D NPN 180, 200 V. 50 Amp Switching G S D S 5 0 0 1 8 , 20 C 2R c2r ®high speed / high power switching transistors

Contextual Info: NPN 180, 200 V. ^ General 3 ^ Semiconductor ^ Industries, Inc. 5 0 A m p S w it c h in g GSDS50018. 20 C 2R R c2r h ig h speed / h ig h po w e r s w it c h in g t r a n s is t o r s The GSD series is a reliable NPN double diffused epitaxial transistor designed fo r

IRF250N

Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
Contextual Info: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100