GSM BASE STATION Search Results

gsm signal Booster

Abstract: gsm signal amplifier gsm Booster GSM max power diagram DML Microwave gsm power amplifiers 10 w 1702 gsm booster circuit circuit booster gsm md68
Contextual Info: 27223 DML Microwave 4/7/01 1:51 pm Page 5 GSM P.A. 10 W BOOSTER AMPLIFIER EXTENDS POWER CAPABILITY OF GSM MICROCELL BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave Booster Amplifier increases the power capability of GSM Microcell Base Stations up to 10. The product is compact

M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Contextual Info: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station

A 434 RF

Abstract: RF receiver 434 Mhz
Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

base station receiver GSM

Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 003, 06/19/06 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

Contextual Info: QHD-2BH-0.9G QUAD HYBRID REV: 002, 09/08/04 TECHNICAL DESCRIPTION FEATURES • 800 - 1000 MHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • GSM 800 BASE STATION RF SUBSYSTEMS • GSM 900 BASE STATION

DML Microwave

Abstract: circulator MHz
Contextual Info: GSM CIRCULATOR GENERAL INFORMATION DML Microwave’s GSM Circulators have been developed specifically to meet the technical requirements of GSM Base Stations. The designs are based on techniques well proven in high volume Cellular radio applications. The device featured is a single junction circulator with low

DML Microwave

Abstract: 1702 rf amplifier 100w rf power amplifier 100w
Contextual Info: 27223 DML Microwave 4/7/01 1:46 pm Page 1 PCS P.A. SOLID STATE 40 W POWER AMPLIFIER FOR GSM 1800 BASE STATIONS GENERAL INFORMATION ADVANTAGES MCE DML Microwave has designed this 40W Power Amplifier for use in GSM 1800 PCS 1900 version available Base Station applications

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

Contextual Info: DATA SHEET AV131-315, AV131-315LF: HIP3 Variable Attenuator for AMPS and GSM Base Stations Features 23 dB attenuation range 1.5 dB insertion loss, 1.5 SWR ● 0–12 V control voltage ● 43 dBm IP3 ● Small footprint LGA package ● Designed for AMPS and GSM base stations

12065G105AT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

MRF7S18125

Abstract: J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with

C5750X5R1H106M

Contextual Info: Freescale Semiconductor Technical Data MRF6S18060 Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060MR1 MRF6S18060MBR1 Designed for GSM and GSM EDGE base station applications with

BGF1801-10

Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
Contextual Info: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for

MRFE6S9046GN

Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

gsm signal amplifier

Abstract: gsm amplifier AWG171638-1 C406506576 172165-1
Contextual Info: m at&t Preliminary Data Sheet March 1993 Microelectronics GSM Low-Noise Amplifier Features Description • Frequency range from 890 MHz to 915 MHz AT&T’s GSM Low-Noise Amplifier was specially designed for applications in GSM base station receivers and operates in a frequency range from

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

85024A

Contextual Info: GSM mobile service test solutions Product overview HP 8922S option H13/14 GSM MS service test set with remote front panel interface With a rapidly increasing installed base of GSM subscribers worldwide, pressure is increasing on mobile repair organizations to optimize

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

ATC100B470

Abstract: ESME630E MRFE6S9130HR3 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 0, 4/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications

KME63VB

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications