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    GSM POWER AMPLIFIERS 10 W Search Results

    GSM POWER AMPLIFIERS 10 W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    GSM POWER AMPLIFIERS 10 W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cellular phone amplifier power control transistor

    Abstract: 8205 A battery DCS Basic Pdf Notes GSM module circuit diagram dcs response time 8205 6 pin fet 8205 gsm signal amplifier high power fet amplifier schematic RF3110
    Text: RF3110 Preliminary 2 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM Handsets • GSM, E-GSM and DCS/PCS Products • Commercial and Consumer Systems • GPRS Class 10 Compatible 2 POWER AMPLIFIERS • Portable Battery-Powered Equipment


    Original     		PDF RF3110 cellular phone amplifier power control transistor 8205 A battery DCS Basic Pdf Notes GSM module circuit diagram dcs response time 8205 6 pin fet 8205 gsm signal amplifier high power fet amplifier schematic RF3110

    Untitled

    Abstract: No abstract text available
    Text: POWER AMPLIFIERS GSM • EDGE Tower Top/Booster Power Amplifiers QBS-427 & QBS-428 FEATURES • +45 dBm GSM +42 dBm EDGE • 925 to 960 MHz or 1805 to 1885 MHz • ETSI Qualified • Bypass Switch -2 dB • Drive Level +41 dBm • 1 to 10 dB I2C Attenuator


    Original     		PDF QBS-427 QBS-428 QBS-427 QBS-428 E52-6025

    Q-Bit

    Abstract: c 1815
    Text: POWER AMPLIFIERS GSM • EDGE Tower Top/Booster Power Amplifiers QBS-427 & QBS-428 FEATURES • +45 dBm GSM +42 dBm EDGE • 925 to 960 MHz or 1805 to 1885 MHz • ETSI Qualified • Bypass Switch -2 dB • Drive Level +41 dBm • 1 to 10 dB I2C Attenuator


    Original     		PDF QBS-427 QBS-428 QBS-427 QBS-428 E52-6025 Q-Bit c 1815

    DML Microwave

    Abstract: 1702 essex UMTS gsm Power Amplifiers
    Text: 27223 DML Microwave 4/7/01 1:54 pm Page 10 TEST PAs 100 WATT POWER AMPLIFIERS FOR UMTS/WCDMA/PCS/GSM Intermodulation Testing Low Cost • High Reliability • Higher Output Levels Short Delivery Lead Times • Demonstration Units Available These new lower cost MCE DML Microwave High Power Amplifiers are


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3160 Preliminary 2 DUAL-BAND GSM/DCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM/DCS Handsets • GPRS Compatible • Commercial and Consumer Systems • GSM, E-GSM and DCS Products 2 Product Description 2.286 + 0.051 The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input


    Original     		PDF RF3160 RF3160 880MHz 915MHz 1710MHz 1785MHz

    gsm signal amplifier

    Abstract: base station receiver GSM signal generator mhz gaussian filter prbs generator 8002 amplifier amplifier gsm signal GSM receiver Wideband FM Modulator Wider
    Text: Application Note GSM Testing using the 2026 family Signal Generators with Option 116 Option 116 is available on the IFR 2026 family to allow it to generate GSM spectrum signals. The 2026 is ideal for performing tests on GSM multi-carrier amplifiers and GSM receivers.


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    Untitled

    Abstract: No abstract text available
    Text: 19-1506; Rev 0; 7/99 GSM900/DCS1800/PCS1900 Triple-Band, Low-Noise Amplifiers Features ♦ Wide Operating Frequency Range 800MHz to 1000MHz MAX2651 1800MHz to 2000MHz (MAX2651/MAX2653) ♦ Excellent Low-Noise Performance 1.2dB over GSM Receive Band (MAX2651)


    Original     		PDF GSM900/DCS1800/PCS1900 MAX2651/MAX2653 GSM900, DCS1800, PCS1900 MAX2651 GSM900 DCS1800/PCS1900 MAX2653 DCS1800

    AWB7220

    Abstract: 802.11a Amplifier awl9966 AWT6302 AWT6388 t6221 Power Amplifier MMIC 2.6 GHz amplifier gsm signal AWT6277 GMSK CDMA
    Text: wireless we’re rig ht be s ide you  experience ANADIGICS People expect to do more with wireless — talk longer with fewer battery recharges; communicate at high speed wherever they use their mobile phones, PDAs or laptops; combine voice, data and multimedia without compromise, and experience ever-increasing convenience and functionality.


    Original     		PDF AGB3300 AGB3301 AGB3302 AGB3303 ANADWLS-1004 AWB7220 802.11a Amplifier awl9966 AWT6302 AWT6388 t6221 Power Amplifier MMIC 2.6 GHz amplifier gsm signal AWT6277 GMSK CDMA

    BGF1801-10

    Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
    Text: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for


    Original     		PDF

    ICS 1210 Pressure Sensor

    Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G


    Original     		PDF CGY2010G; CGY2011G CGY2010G CGY2011G -129uctors SCA50 647021/1200/02/pp12 ICS 1210 Pressure Sensor 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14

    TSMC 0.35um

    Abstract: GSM module circuit diagram tsmc cmos GSM gsm signal amplifier tsmc cmos GSM RF module 0.35Um tsmc TSMC 0.35um digital gsm signal amplifier circuit diagram TQD764022
    Text: TQD7M4022A Preliminary Data Sheet CMOS Power Control Die for GSM Modules Features Functional Block Diagram • CMOS_010_6_2_2 circuit, including PA interface Part of 3-chip set which provides 4-band operation with integrated, closed-loop power control Wide input voltage range: 3.0 to 4.5V


    Original     		PDF TQD7M4022A TSMC 0.35um GSM module circuit diagram tsmc cmos GSM gsm signal amplifier tsmc cmos GSM RF module 0.35Um tsmc TSMC 0.35um digital gsm signal amplifier circuit diagram TQD764022

    PMB2251

    Abstract: CF739 startac smd schottky diode s6 97 dect pmb motorola 125 khz reader antenna smd schottky diode s6 33 amplifier siemens sot-363 CLY 2 mw-6 SMD CHIP
    Text: Discrete semiconductors GaAs MMICs increase operating and standby times of mobile phones When mobile communications terminals operate with 3-V technologies, there is no alternative to using low-noise and energy-saving components in the RF front end. Thanks to the extensive experience gained in the volume production of discrete GaAs


    Original     		PDF Semiconductor/products/35/3517 PMB2251 CF739 startac smd schottky diode s6 97 dect pmb motorola 125 khz reader antenna smd schottky diode s6 33 amplifier siemens sot-363 CLY 2 mw-6 SMD CHIP

    Untitled

    Abstract: No abstract text available
    Text: ED R E S U ATU C FO E FE SU S I Gary Zhang, Sabah Khesbak, Anil Agarwal, and San Chin T he first official shift in communication systems from fixed-location devices to portable/mobile devices happened in 1973 when Martin Cooper, general manager of Motorola’s Communications Systems Division at the time, placed the first mobile call from a New


    Original     		PDF

    sky77814

    Abstract: SKY85309 SKY77627-11 SKY77621-31
    Text: New Products Winter 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets, and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 4 Wearables . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF BRO399-14D sky77814 SKY85309 SKY77627-11 SKY77621-31

    IC vco 900 1800 mhz

    Abstract: vco 900 1800 mhz GSM GSM signal processing block IC vco 1800 mhz rf gsm demodulator HD155171T hitachi SAW Filter hd155171 gsm demodulator HD155131TF
    Text: PRODUCTS IN FOCUS High-Frequency Block Signal Processing IC for European Digital Mobile Phone GSM HD155131TF M ain Uses: GSM HD155131TF, equipped with LNAs low Single-chip RF IC, meeting the noise amplifiers and dual PLL syntheneed for small, lightweight tersizers. The HD155131TF uses a 0.35 µm


    Original     		PDF HD155131TF HD155131TF, HD155131TF IC vco 900 1800 mhz vco 900 1800 mhz GSM GSM signal processing block IC vco 1800 mhz rf gsm demodulator HD155171T hitachi SAW Filter hd155171 gsm demodulator

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    VCO 2307

    Abstract: DCS1900 cellular receiver, qam PLL pSK DEMODULATOR SSB Receiver ITB08464 ITB08465 SMD phase shifter amplifier gsm signal gsm demodulator
    Text: GSM Receiver PCN/PCS Receiver PMB 2405 B6HF PMB 2407 B6HF General Description The PMB 2405, 2407 family are single-chip doubleconversion heterodyne receivers with LO-phase shifting circuitry for the I/Q-phase demodulation on chip. It also includes a switchable low noise amplifier, the second local


    Original     		PDF 2405-F P-TQFP-48-1 2407-F ITB08464 P-TQFP-48 P-TSSOP-16 ITB08465 VCO 2307 DCS1900 cellular receiver, qam PLL pSK DEMODULATOR SSB Receiver ITB08464 ITB08465 SMD phase shifter amplifier gsm signal gsm demodulator

    TI OMAP 1710

    Abstract: omap 1710 16 pin 4x4 amplifier gsm circuit diagram for rfid and gsm combination unit
    Text: OBSOLETE LMX2604 www.ti.com SNOSA61B – JANUARY 2004 – REVISED APRIL 2013 LMX2604 Triple-band VCO for GSM900/DCS1800/PCS1900 Check for Samples: LMX2604 FEATURES DESCRIPTION • The LMX2604 is a fully integrated VCO VoltageControlled Oscillator IC designed


    Original     		PDF LMX2604 SNOSA61B LMX2604 GSM900/DCS1800/PCS1900 20-Pin TI OMAP 1710 omap 1710 16 pin 4x4 amplifier gsm circuit diagram for rfid and gsm combination unit

    TG2H214220-FL

    Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
    Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    ths1470

    Abstract: THS1052 SLOA085 gsm signal amplifier if filter 38,9 OP-amp baseband SLOD006A VRE3050 amplifier gsm signal BPF filter rf
    Text: Chapter 13 Wireless Communication: Signal Conditioning for IF Sampling Literature Number SLOA085 Excerpted from Op Amps for Everyone Literature Number: SLOD006A Chapter 13 Wireless Communication: Signal Conditioning for IF Sampling Perry Miller and Richard Cesari


    Original     		PDF SLOA085 SLOD006A ths1470 THS1052 SLOA085 gsm signal amplifier if filter 38,9 OP-amp baseband SLOD006A VRE3050 amplifier gsm signal BPF filter rf

    M 9587

    Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
    Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station


    Original     		PDF SG1009/D MRF377 MW4IC001MR4 MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 MHVIC1905R2, MW4IC2020MBR1, MW4IC2020GMBR1, M 9587 FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210

    AV to rf converter

    Abstract: Precision Amplifiers Low Power Amplifiers "Precision Amplifiers" LMV221 LMV551 LMV652 SC70-5 sensors voltage battery
    Text: Low Voltage, Low Power Amplifiers & Comparators, and Precision Amplifiers Selection Guide National Semiconductor Asia Pacific Authorized Distributors LMV221 – 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Features Key Applications


    Original     		PDF LMV221 LMV551 VIP50 LMV652 AV to rf converter Precision Amplifiers Low Power Amplifiers "Precision Amplifiers" LMV221 LMV551 LMV652 SC70-5 sensors voltage battery

    LQFP-48 footprint

    Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
    Text: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power


    OCR Scan     		PDF PCA5075 SA1620. CGY2010G; CGY2011G CGY2010G CGY2011G LQFP-48 footprint schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000