GSM800 Search Results

Contextual Info: Passive Down Mixer PM0901 Product Features Application • High linearity passive Quad MOSFET mixer • High Reliability • Lower Manufacturing Cost • Higher Productivity • GSM800 & Cellular Base Station Receivers • RF Sub-Systems Description The MCM is implemented with reliable and mature MOSFET technology.

MRF MOSFET

Abstract: 858C ETC1-1-13 PE4135 PE4135-EK
Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up

Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity, UltraCMOS™ passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a

BGF844

Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

ETC1-1-13

Abstract: PE4124 PE4124-EK Transformer tee
Contextual Info: PRODUCT SPECIFICATION PE4124 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad

Contextual Info: 1/2 Multilayer Chip Phase Shifters(Delay Lines) For GSM800 Conformity to RoHS Directive DEA Series DEA100915DT-6001B1 SHAPES AND DIMENSIONS 2 0.12±0.07 0.3±0.1 0.12±0.07 3 1 0.5±0.05 0.52max. 0.3±0.1 1.0±0.05 4 Terminal functions 1 IN 2 GND 3 OUT 4 GND

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN

MBL257

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN

PE4124

Abstract: PE4124-EK 858C ETC1-1-13 IF70MHz
Contextual Info: PRODUCT SPECIFICATION PE4124 High Linearity Quad MOSFET Mixer For GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad

bts 2140 1b data sheet

Abstract: mosfet 408C RFIC RF Identification Devices 858C ETC1-1-13 PE4125 PE4125-EK peregrine 408C
Contextual Info: PRELIMINARY SPECIFICATION PE4125 High Linearity Quad MOSFET Mixer For GSM800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad

455 mhz if transformer

Abstract: PE4124 PE4124-EK
Contextual Info: Advance Information PE4124 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Features • Integrated, Single Ended RF & LO Interfaces • High linearity: IIP3 >+30 dBm, 820 – 920 MHz +17 dBm LO • Low conversion loss: 8 dB (+17 dBm LO) • High Isolation: Typical LO-IF at 38 dB

Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up

BGF844

Abstract: SR200 SR400 SR600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Mar 28 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • 26 V nominal supply voltage PIN • Low distortion to a GSM EDGE signal.

thermal compound wps II

Abstract: PHILIPS TANTALIUM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Oct 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • Low distortion to a GSM EDGE signal. PIN

mrf 861

Abstract: ETC1-1-13 PE4135 RF POWER MOSFET
Contextual Info: PRODUCT SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad

K745

Abstract: capacitor shc P743
Contextual Info: TQD714022 Preliminary Data Sheet GSM800/900 Power Amplifier Die Features Functional Block Diagram DC V T T • • • • V V W Bi R High Efficiency 50 Ω input and output impedances High Reliability InGaP technology 10:1 Ruggedness RF E E Applications I

bts 2140 1b data sheet

Abstract: RFIC RF Identification Devices bts 2140 bts 2140 1b ETC1-1-13 PE4124 PE4124-EK peregrine rfic marking 162
Contextual Info: ADVANCE INFORMATION PE4124 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive MOSFET Quad Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over an LO

bts 2140 1b data sheet

Abstract: RFIC RF Identification Devices bts 2140 ETC1-1-13 PE4125 PE4125-EK
Contextual Info: ADVANCE INFORMATION PE4125 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Product Description The PE4125 is a high linearity, passive MOSFET Quad Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over an LO

thermal compound wps II

Abstract: austerlitz BGF844 SR200 SR400 SR600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

bts 2140

Abstract: ETC1-1-13 858C PE4135 ETK1-1-13 4135-01
Contextual Info: PRELIMINARY SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad

2 LOIF

Abstract: CMAC cm2002 c-mac CMAC frequency c.mac
Contextual Info: PRELIMINARY SPECIFICATION CM2002-800 Preliminary Specification CM2002-800 Product Description High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS The CM2002-800 is a high linearity, passive MOSFET Quad Mixer Features for GSM800 and Cellular Base Station Receivers, exhibiting high

455 mhz if transformer

Abstract: PE4125 PE4125-EK
Contextual Info: Advance Information PE4125 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Features • Integrated, Single Ended RF & LO Interfaces • High linearity: IIP3 >+30 dBm, 820 – 920 MHz +17 dBm LO • Low conversion loss: 8 dB (+17 dBm LO • High Isolation: Typical LO-IF at 38 dB

safel881

Abstract: murata SAW
Contextual Info: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Package Dimensions

CMAC

Contextual Info: PRELIMINARY SPECIFICATION CM2002-800 Product Description High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS The CM2002-800 is a high linearity, passive MOSFET Quad Mixer Features for GSM800 and Cellular Base Station Receivers, exhibiting high •