GT10J312, Search Results
GT10J312, Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT10J312 |
|
Insulated Gate Bipolar Transistor Silicon N-Channel IGBT | Original | 484.78KB | 7 | ||
| GT10J312 |
|
Original | 488.54KB | 7 | |||
| GT10J312 |
|
Discrete IGBTs | Original | 586.27KB | 15 | ||
| GT10J312 |
|
Discrete IGBTs | Original | 539.84KB | 16 | ||
| GT10J312 |
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan | 298.95KB | 6 | ||
| GT10J312(Q) |
|
IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 10A 60W TO220SM | Original | 7 | |||
| GT10J312(SM) |
|
Original | 488.54KB | 7 | |||
| GT10J312SM |
|
SILICON N CHANNEL IGBT | Original | 484.78KB | 7 | ||
| GT10J312(SM) |
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan | 298.95KB | 6 |
GT10J312, Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components GT10J312(Q)IGBT 600V 10A 60W TO220SM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
GT10J312(Q) | Tube |
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Buy Now | |||||||
Toshiba America Electronic Components GT10J312SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
GT10J312 | 100 |
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Get Quote | |||||||