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    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

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    GT20J121

    Abstract: gt20j1
    Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


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    GT20J121 O-220SIS GT20J121 gt20j1 PDF

    Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original
    GT20J121 O-220SIS PDF

    gt20j121

    Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original
    GT20J121 O-220SIS gt20j121 PDF