GTO 5000 V Search Results

FG600AH

Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
Contextual Info: 7294621 POWEREX INC \ ' T - ZsST- D e 75^4^.51 00D1A53 4 /? Gate Turn-Off (GTO Thyristors iT(AV) l*t for Fusing @ 8.3 ms (A*sec x 10*) Vd r m /V r r m 60/300 1.7 800-1600/15 2500 60/300 2.6 4000 8 0/300 [120] 5000 600 [120] 7 c = 9 9 °C 600 [120] 280 Tc = 9 5 eC

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1

Contextual Info: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 4570 7180 73x103 0.8 0.107 Rectifier Diode V A A A V m 5SDD 50N5500 Doc. No. 5SYA1169-00 Aug 11 • Patented free-floating silicon technology  Very low on-state losses  Optimum power handling capability

Contextual Info: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology  Very low on-state losses  Optimum power handling capability

Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)

40A GTO thyristor

Abstract: GTO thyristor 4500V 4000A G4000EC450 GTO thyristor GTO thyristor datasheet THYRISTOR GTO FT40
Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1)

7,5 kw mitsubishi inverter

Abstract: gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi
Contextual Info: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Voltage class Parameter Symbol Unit 90DA Repetitive peak off-state voltage*

GTO thyristor

Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

5sya2020

Abstract: 5SDD40H4000
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V 5SDD 33L5500 mW Doc. No. 5SYA1168-01 Apr 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability

GTO switching test

Abstract: 100A GTO gto mitsubishi GTO peak reverse test mitsubishi FGR3000FX-90DA GTO switching test mitsubishi dv 700 inverter M1037 GTO 5000 V mitsubishi gto
Contextual Info: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA • Itq rm Repetitive controllable on-state current. 3 0 0 0 A • lT AV A v e ra g e o n -s ta te c u r r e n t . 7 8 0 A

thyristor lifetime

Contextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

40A GTO thyristor

Abstract: gate turn off thyristor 50A GTO thyristor GTO thyristor WESTCODE WG40045SN Gate Turn Off Thyristor GTO
Contextual Info: WESTCODE Date : Jul-00 Data sheet Issue 2 Gate turn off Thyristor Type WG40045SN Absolute maximum ratings MAXIMUM VOLTAGE RATINGS LIMITS VDRM Repetitive peak off-state voltage, note 1 . 4500 VDSM Non-repetitive peak off-state voltage, (note 1). 4500 VRRM

14h45

Abstract: Abb diode 14H4505 a3700 5sdf14h4505
Contextual Info: Key Parameters VRRM = 4500 IFAVM = 1400 IFRMS = 2200 IFSM = 25 VF0 = 1.20 rF = 0.32 VDClink = 2200 V A A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses

gto 2400 capacitor

Abstract: Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004
Contextual Info: MKV AC Capacitors GTO Snubbering and Clamping B 25 855 High rate of voltage rise High peak-current capability Extremely low inductance Construction ● ● ● ● ● ● ● ● Self-healing Plastic dielectric Oil-impregnated tubular windings no PCB Metal-sprayed end faces ensure reliable

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

5SGA40L4501

Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 4275 A = 6715 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38Q4200 Doc. No. 5SYA1051-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

diode vrrm 8000 if 7000

Abstract: 5SDD31H6000
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3246 5099 40x103 0.894 0.166 Rectifier Diode V A A A V mΩ 5SDD 31H6000 Doc. No. 5SYA1183-02 May 09 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values 1) Parameter

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static