GTO 5000 V Search Results
GTO 5000 V Price and Stock
E-Switch Inc 5000701LENSREMOVINGTOOLSwitch Hardware Lens Removal Tool |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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5000701LENSREMOVINGTOOL | 35 |
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GTO 5000 V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FG600AH
Abstract: FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH
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00D1A53 80ation MAX/10 FG600AH FG1800AH FG600AV FG1000AL FG1000A fg2000av FG1000AH | |
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1 |
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38H5000 5SYA1177-00 CH-5600 | |
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1 |
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40H4000 5SYA1176-00 CH-5600 | |
Contextual Info: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 4570 7180 73x103 0.8 0.107 Rectifier Diode V A A A V m 5SDD 50N5500 Doc. No. 5SYA1169-00 Aug 11 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability |
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50N5500 5SYA1169-00 CH-5600 | |
Contextual Info: V RRM I F AV I F(RMS I FSM V F0 rF = = = = = = 5000 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V m 5SDD 33L5500 Doc. No. 5SYA1168-00 Aug 10 • Patented free-floating silicon technology Very low on-state losses Optimum power handling capability |
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33L5500 5SYA1168-00 CH-5600 | |
Contextual Info: WESTCODE An Date:- 27 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Anode Shorted Gate Turn-Off Thyristor Type G4000EC450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 4500 V VDSM Non-repetitive peak off-state voltage, (note 1) |
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G4000EC450 G4000EC450 | |
40A GTO thyristor
Abstract: GTO thyristor 4500V 4000A G4000EC450 GTO thyristor GTO thyristor datasheet THYRISTOR GTO FT40
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G4000EC450 G4000EC450 40A GTO thyristor GTO thyristor 4500V 4000A GTO thyristor GTO thyristor datasheet THYRISTOR GTO FT40 | |
7,5 kw mitsubishi inverter
Abstract: gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi
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R3000FX-90DA 7,5 kw mitsubishi inverter gto 100A 100A GTO GTO peak reverse test mitsubishi ODC20 GTO switching test mitsubishi | |
GTO thyristor
Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
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40L4502 40L4502 CH-5600 GTO thyristor ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB | |
Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1 |
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48H3200 5SYA1182-00 CH-5600 | |
5sya2020
Abstract: 5SDD40H4000
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40H4000 5SYA1176-01 CH-5600 5sya2020 5SDD40H4000 | |
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current. |
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51L2800 5SYA1103-02 CH-5600 | |
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46x103 0.94 0.147 Rectifier Diode V A A A V 5SDD 33L5500 mW Doc. No. 5SYA1168-01 Apr 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability |
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33L5500 5SYA1168-01 CH-5600 | |
GTO switching test
Abstract: 100A GTO gto mitsubishi GTO peak reverse test mitsubishi FGR3000FX-90DA GTO switching test mitsubishi dv 700 inverter M1037 GTO 5000 V mitsubishi gto
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R3000FX-90 FGR3000FX-90DA GTO switching test 100A GTO gto mitsubishi GTO peak reverse test mitsubishi FGR3000FX-90DA GTO switching test mitsubishi dv 700 inverter M1037 GTO 5000 V mitsubishi gto | |
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thyristor lifetimeContextual Info: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105. |
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703-996-8200x105. DE-FG0207ER84712, thyristor lifetime | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link |
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14H4505 CH-5600 | |
40A GTO thyristor
Abstract: gate turn off thyristor 50A GTO thyristor GTO thyristor WESTCODE WG40045SN Gate Turn Off Thyristor GTO
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Jul-00 WG40045SN WG40045SN 40A GTO thyristor gate turn off thyristor 50A GTO thyristor GTO thyristor WESTCODE Gate Turn Off Thyristor GTO | |
14h45
Abstract: Abb diode 14H4505 a3700 5sdf14h4505
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14H4505 CH-5600 14h45 Abb diode 14H4505 a3700 5sdf14h4505 | |
gto 2400 capacitor
Abstract: Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004
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B25855-C2255-K004 gto 2400 capacitor Siemens matsushita capacitor B25855C1305K004 ISO 4035 B25855-C7106-K004 B25855C3105 B25855C3155K004 siemens CAPACITOR 40/085/56 B25855C8106K004 B25855C8205K004 | |
Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link |
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14H4505 5SYA1110-02 CH-5600 | |
5SGA40L4501
Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
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40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB | |
abb phase control thyristorsContextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 4275 A = 6715 A = 60x103 A = 0.95 V = 0.13 mΩ Phase Control Thyristor 5STP 38Q4200 Doc. No. 5SYA1051-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications |
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38Q4200 5SYA1051-02 38Q4200 CH-5600 abb phase control thyristors | |
diode vrrm 8000 if 7000
Abstract: 5SDD31H6000
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31H6000 5SYA1183-02 CH-5600 diode vrrm 8000 if 7000 5SDD31H6000 | |
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static |
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40L4502 40L4502 CH-5600 |