GTO GATE DRIVERS Search Results

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

anode gate thyristor

Contextual Info: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author

3 phase inverters circuit diagram igbt

Abstract: inverters circuit diagram igbt controller for PWM with IGBT igbt dc to dc chopper control circuit diagram PWM igbt 200v dc motor igbt ac motor speed control circuit diagram with IGBT 3 phase motor inverters circuit diagram igbt FZ800R16KF1 SCR Inverter datasheet
Contextual Info: Dynamic Gate Controller DGC - A New IGBT Gate Unit for High Current / High Voltage IGBT Modules 1 Introduction The “Dynamic Gate Controller” (DGC) represents the forth generation of intelligent IGBT driver concepts. The DGC is especially designed to drive and to protect high-power IGBTs as

Contextual Info: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching

TA0522

Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
Contextual Info: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

AN7254

Abstract: RFP8P10 TB334
Contextual Info: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet Title FP2 0 bt A, 0V, 00 m, anwer OST) utho July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

rfp12p10

Abstract: rfp12p08 TB334 FAIRCHILD to220ab package
Contextual Info: RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers

RFL1N10L

Abstract: AN7254 AN7260
Contextual Info: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

AN7254

Abstract: AN7260 RFP15N15 TB334
Contextual Info: RFP15N15 Data Sheet January 2002 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching

AN7254

Abstract: AN7260 RFP15N05L RFP15N06L TB334
Contextual Info: RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs Features • 15A, 50V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: FDI8442 N-Channel PowerTrench MOSFET 40V, 80A, 2.9mΩ Features Applications ̈ Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A ̈ Automotive Engine Control ̈ Typ Qg(10) = 181nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

FDB8443

Contextual Info: FDB8443 tm N-Channel PowerTrench MOSFET 40V, 80A, 3.0mΩ Features Applications „ Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 142nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

FDD8444

Contextual Info: FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications „ RDS ON = 4mΩ (Typ), VGS = 10V, ID=50A „ Automotive Engine Control „ Qg(10) = 89nC (Typ), VGS=10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

Contextual Info: FDD8444 tm N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications ̈ Typ rDS on = 4mΩ at VGS = 10V, ID = 50A ̈ Automotive Engine Control ̈ Typ Qg(10) = 89nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

fdb8444

Contextual Info: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications ̈ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A ̈ Automotive Engine Control ̈ Typ Qg(TOT) = 91nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers

FDB8444

Contextual Info: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications „ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A „ Automotive Engine Control „ Typ Qg(TOT) = 91nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

alternator diode 35a 12v

Abstract: AN7514 FDP8441
Contextual Info: FDP8441 tm N-Channel PowerTrench MOSFET 40V, 80A, 2.7mΩ Applications „ Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

FDB8441

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.5mΩ Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers