GUNN OSCILLATORS Search Results

AN5205

Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
Contextual Info: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage

2.2 GHz local oscillator

Abstract: gunn Gunn oscillator MA86797 Ka-band Ka-band oscillator
Contextual Info: Gunn Oscillator 35.5 GHz MA86797 V3.00 2.2 ␮ F CAPACITOR Features ● ● ● ● ● Low Cost Ka-band Gunn Oscillator Frequency 35.5 GHz 10 mW Minimum Output Power Low Phase Noise for Doppler Measurements Rugged Mechanical Construction for Industrial Environments

10GHz oscillator

Abstract: CXY13D CXY13E gunn effect
Contextual Info: GUNN EFFECT DEVICES CXYI3D CXYI3E TENTATIVE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of

2.2 GHz local oscillator

Abstract: Gunn oscillator GUNN Ka-band oscillator
Contextual Info: an A M P com pany Gunn Oscillator 35.5 GHz MA86797 V3.00 Features Low Cost Ka-band Gunn Oscillator Frequency 35.5 GHz 10 mW Minimum Output Power Low Phase Noise for Doppler Measurements Rugged Mechanical Construction for Industrial Environments Description

motion DOPPLER k-band gunn

Abstract: MA86790 GUNN CW doppler radar Gunn oscillator police radar Oscillator
Contextual Info: K-Band Gunn Oscillator MA86790 V2.00 Features ● ● ● ● ● GROUND POST 10 mW 24.150 GHz Fundamental Oscillator Low Voltage Operation Low AM and FM Noise Oscillator Can be Directly Attached to a Horn Antenna Low Cost 0.900 MAX. (22.86) GUNN BIAS Description

diode b34

Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Contextual Info: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave

Gunn Diode

Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property

Gunn Diode MA49156

Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

DOPPLER 10.525 ghz

Abstract: DOPPLER 10.525 CW doppler radar MA86751 MA86751B Gunn Oscillator WR90 capacitor, 100 microfarad 35 volts capacitor, 100 microfarad and 35 volts MA86751A WR90 flange
Contextual Info: X-Band Gunn Oscillator MA86751 V3.00 Features ● ● ● ● ● 10 to 100 mW Gunn Oscillator Series Low AM and FM Noise Mechanically Rugged for Industrial Environments Factory Tunable from 9.9 GHz to 10.6 GHz Suitable for Part 15 FCC Applications 0.172 DIA.

DOPPLER 10.525 ghz

Abstract: Gunn Oscillator WR90 MA86751B GUNN OSCILLATORS
Contextual Info: an A M P com pany X-Band Gunn Oscillator MA86751 V3.00 Features • • • • • 10 to 100 mW Gunn Oscillator Series Low AM and FM Noise Mechanically Rugged for Industrial Environments Factory Tunable from 9-9 GHz to 10.6 GHz Suitable for Part 15 FCC Applications

Contextual Info: HUGHES/ MICROWAVE PRDTS 1 TE D m 41313303 OOOOaiO =1 Gunn Diodes _ T :07-i| _ Hughes 4720xH series of GaAs Gunn Diodes are available for operation at any specified frequency between 26.5 and 95 GHz. Power output levels range from 20 mW at 95 GHz to

Contextual Info: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency

Gunn Diode MA49156

Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Gunn oscillator

Abstract: MA86790 motion DOPPLER k-band gunn gunn
Contextual Info: an A M P com pany K-Band Gunn Oscillator MA86790 V2.00 Features • • • • • 10 mW 24.150 GHz Fundamental Oscillator Low Voltage Operation Low AM and FM Noise Oscillator Can be Directly Attached to a Horn Antenna Low Cost Description The MA86790 Gunn oscillator is useful as an inexpensive

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

ML4942

Abstract: ML4953
Contextual Info: M L 4000 SERIES HIGH FREQUENCY CW GUNN DIODES - 18 TO 100GHZ This series o f high frequency Gunn diodes features low noise both AM and FM , good efficiency and one-step conversion from dc to microwave energy using a single, low voltage power supply. These devices are ideally suited for use as param p pump sources and as transm itters

MO86751A

Contextual Info: GUNN OSCILLATORS Fixed Frequency TM MO8651 – MO9205 Features Low Cost Small Size Low Power Consumption High-Volume Design Pulsed DC Input Voltage Available Applications Speed Radar Intrusion Alarm Systems Braking Systems Description Industrial Measurement

gunn diode radar

Abstract: gunn diode x band radar gunn diode 10.5 ghz radar gunn diode varactor diode for x band radar Gunn Diode MO87108 x band gunn diode gunn diode oscillator gunn diode datasheet
Contextual Info: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●

MO86751A

Abstract: wr 90 x band flange waveguide GUNN OSCILLATORS gunn diode MO86751 MO9205 microwave waveguide UG-39U gunn diode datasheet MO9080
Contextual Info: GUNN OSCILLATORS Fixed Frequency TM MO8651 – MO9205 Features ● Low Cost ● Small Size ● Low Power Consumption ● High-Volume Design ● Pulsed DC Input Voltage Available Applications ● Speed Radar ● Intrusion Alarm Systems ● Braking Systems

gunn diode radar

Abstract: police radar detector radar gunn diode motion DOPPLER stereo doppler radar police radar detector detector GUNN OSCILLATORS police radar police radar detector receiver Gunn Diode
Contextual Info: M /A-COM 's Commercial Sources Group manufactures a wide range of Gunn Diode based Oscillators, Motion Detection Modules, Voltage Controlled Oscillators and Telecommunication Transmitters and Receivers for short haul terrestrial radio links in Ku and K bands.

DC4303A

Abstract: Marconi gunn gunn diode datasheet Gunn Diode gunn diode marconi DC4303B Gunn Diode at power supply circuit DC4301A DC4301B DC4302A
Contextual Info: Gallium Arsenide Tuning Varactors This range of epitaxial GaAs Schottky barrier variable capacitance diodes is designed primarily for electronic tuning of Gunn and transistor microwave oscillators. They have the advantage over silicon tuning diodes in that the required change in capacitance occurs

GUNN OSCILLATORS

Abstract: gunn diode 10.5 ghz
Contextual Info: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●

MA49156

Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Contextual Info: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION

Contextual Info: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description