GV 275 DIODE Search Results

FF1200R17KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1200R17KE3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( < & $ A & / B A ( %& & ' & ( ' *+ , -.

eupec diode e12

Abstract: FF1200R17KE3
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1200R17KE3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( < & $ A & / B A ( %& & ' & ( ' *+ , -.

Z2SMB33

Abstract: zener DIODE MARKING code GM
Contextual Info: Z2SMB3V3 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 3V3 to 200 V Power 2.0 W 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package

diode code GW 42

Abstract: ZENER 3v3 smb DO-214AA 3v3 diode GU do-214aA zener code jb Z2SMB10 Z2SMB11 Z2SMB12 Z2SMB13 Z2SMB16
Contextual Info: Z2SMB3V3 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 3V3 to 200 V Power 2.0 W 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package

2sk4206g

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

2SK4206

Abstract: u265
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV

2SK4206

Abstract: 2SK42
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK4206

Abstract: Marking code 9H 2SK4206G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK4206

Abstract: 2SK4206G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

613SPV

Abstract: TLE 427 marking CDM2 MBRD360 GV 475 diode TLE6389-2 PG-DSO-14-1 p-mosfet bsp B82479-A1473-M BSP613P
Contextual Info: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A

MBRD360

Contextual Info: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A

6389-3GV50

Abstract: GV 475 diode GV50 gv-50 6389-2gv 63893GV50 6389GV 613spv 3gv50 MBRD360
Contextual Info: Step-Down DC/DC Controller TLE 6389 Datasheet 1 Overview 1.1 Features • • • • • • • • • • • • • 1 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A

gv 275 diode

Abstract: SMC7G30US60
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

SMC7G30US60 XX2

Abstract: A OF IGBT Fast Recovery Rectifier, 300V XX1
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

THYRISTOR 30A 300V

Abstract: THYRISTOR 1A 300V thyristor 12V it 1A thyristor inverter 7MBR30SC060 power supply 12v 30a schematic
Contextual Info: 7MBR30SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 30A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

7MBR75UB120

Contextual Info: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

600v 30a IGBT

Abstract: sine wave power inverter schematic sine wave inverter thyristor 12V it 1A voltage inverter schematic 7MBR30SC060
Contextual Info: 7MBR30SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 30A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

3843B

Abstract: UC3842BL UC3843BL UC3842B application to 3843b application note uc3842b equivalent IC 3843B UC3842B PWM 3843B UC3842BL-D08-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3842B/3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS „ DESCRIPTION The UTC UC3842B/3843B are specifically designed for off-line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external components.

7MBR75UB120

Abstract: 7MBR75UB-120 12 volt dc to 120 volt ac Inverter schematic
Contextual Info: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

3FW transistor

Abstract: apc2040 MAX3669 MAX3669EHJ MAX3669ETG MAX3693 ww h 845 1 r 3FW 66
Contextual Info: 19-1575; Rev 1; 5/04 KIT ATION EVALU ABLE AVAIL +3.3V, 622Mbps SDH/SONET Laser Driver with Current Monitors and APC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ +3.3V or +5.0V Single-Supply Operation 40mA Supply Current at +3.3V Programmable Bias Current from 1mA to 80mA

3FW transistor

Abstract: 3FW 72 transistor EMCORE VCSEL EY transistor DS1858 MAX3740A MAX3740AETG 3FW 17 transistor
Contextual Info: 19-3118; Rev 1; 6/04 3.2Gbps SFP VCSEL Driver with Diagnostic Monitors The MAX3740A operates up to 3.2Gbps. It can switch up to 15mA of laser modulation current and source up to 15mA of bias current. Adjustable temperature compensation is provided to keep the optical extinction

UC3842B UC3843B

Abstract: 3843B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3842B/3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS  DESCRIPTION The UTC UC3842B/3843B are specifically designed for off-line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external components.