GW 540 DIODE Search Results

AM23R

Abstract: FF900R12IP4D 3EM3
Contextual Info: Technische Information / technical information FF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

FF900R12IP4

Abstract: AM2101 E10010
Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information BSM300GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

wega 3140

Abstract: MFW diode Siemens L16A Diode MFW 24 Diode MFW 25 MFW diode 31 Diode marking MFW 31 Diode MFW 26 Diode marking MFW
Contextual Info: Terminal markers Contents Terminal markers Terminal markers Introduction B.2 Selection table – terminal markers B.3 DEK card B.6 DEK MultiCard B.10 WS / ZS B.12 MultiFit for use with other makes of terminals B.16 Cross-reference table B.20 Terminal marker WAD

BSM300GA120DLC

Abstract: EM4G
Contextual Info: Technische Information / technical information BSM300GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

IEC 947-7-1 terminal block 400v

Abstract: din 46235 1064760000 M12-M16 1011120000 95 WDU Neozed 1027700000 gw 4007 1020500000
Contextual Info: W-series 2 W-series sets standards! When it comes to functional perfection even in details, Weidmüller’s W-series defines the market standards for many years now! The W-series comprises producte for conductor cross-sections between 1.5 and 300 mm2 which can be used for all important electrical applications connecting,

siemens Logo TDE manual

Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
Contextual Info: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

igbt mitsubishi cm75tf-12h

Abstract: CM75TF-12H H bridge 300v 30a GW 540 DIODE
Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM5024

Abstract: CM50TF-24H A 40202
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM75TF-12H

Abstract: m4 12h igbt mitsubishi cm75tf-12h
Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM50TF-28H

Abstract: igbt 800v 50a aa 118 diode
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M L B J Y DIA. (4 TYP.) AA L TAB #110, t = 0.5

CM50TF-24H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM100TF-12H

Abstract: m4 12h
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

m4 12h

Abstract: CM100TF-12H
Contextual Info: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

KB 7780

Abstract: SMAJ83 GE 43 TVS
Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 400 Watt Specifications - SMAJ Series Electrical Characteristics j Part i| ! Part | I jl0 /1 0 0 0 jjs| | | jMaximumjMaximumj IO/IOOOjjs

Contextual Info: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance

pn photodiode

Abstract: BPW21R 81519 photodiode PN
Contextual Info: BPW21R Vishay Telefunken Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

BPW21

Abstract: BPW21R
Contextual Info: BPW21R Vishay Telefunken Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

BPW21R

Abstract: photovoltaic sensor BPW21 v BPW21R
Contextual Info: BPW21R Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination

BPW20R

Abstract: GW 540 DIODE BPW20 photodiode PN
Contextual Info: BPW20R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination